C-Band High Harmonics Suppression GaN Power Amplifier MMIC for Multiradar Network Application

被引：10
作者：
Yang, Fan [1 ,2 ]
Song, Leijun [2 ]
Xu, Yuehang [1 ]
机构：
[1] Univ Elect Sci & Technol China, Sch Elect Sci & Engn, Chengdu 611731, Peoples R China
[2] Beijing Inst Radio Measurement, Microwave Technol Res & Dev Ctr, Beijing 100854, Peoples R China
来源：
IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERS | 2023年 / 33卷 / 03期
基金：
中国国家自然科学基金;
关键词：
Gallium nitride (GaN); harmonics suppression (HSs); high power amplifier (HPA); monolithic microwave integrated circuit (MMIC); EFFICIENCY; ENHANCEMENT; HEMTS;
D O I：
10.1109/LMWC.2022.3216907
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This letter presents a C-band 50-W high-power amplifier (HPA) monolithic microwave integrated circuit (MMIC) based on the 0.25-mu m gallium nitride (GaN) high electron mobility transistor (HEMT) process. A multiple reactance matching method in output matching network (OMN) is proposed, which can achieve high harmonics suppression ( HSs) while maintaining good bandwidth and low loss. The pulse excitation measurement results of the proposed MMIC show that the saturated output power exceeds 50 W in the 5-7-GHz frequency range, the power added efficiency (PAE) is more than 52%, the associated power gain is over 21 dB, and the second harmonic suppression (HS2) and the third harmonic suppression (HS3) reach more than 41 and 43 dBc, respectively. Besides, the area of the MMIC is 3.55 x 4.05 mm(2).
引用
收藏
页码：315 / 318
页数：4
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