Reliability Comparison of Commercial Planar and Trench 4H-SiC Power MOSFETs

被引：6

作者：

Zhu, Shengnan ^{[1
]}

Shi, Limeng ^{[1
]}

Jin, Michael ^{[1
]}

Qian, Jiashu ^{[1
]}

Bhattacharya, Monikuntala ^{[1
]}

Maddi, Hema Lata Rao ^{[1
]}

White, Marvin H. ^{[1
]}

Agarwal, Anant K. ^{[1
]}

Liu, Tianshi ^{[2
]}

Shimbori, Atsushi ^{[2
]}

Chen, Chingchi ^{[2
]}

机构：

[1] Ohio State Univ, Dept Elect & Comp Engn, Columbus, OH 43210 USA

[2] Ford Motor Co, Dearborn, MI 48121 USA

来源：

2023 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS | 2023年

关键词：

SiC MOSFET; planar and trench; gate oxide reliability; threshold voltage shift; short-circuit capability;

D O I：

10.1109/IRPS48203.2023.10117998

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The gate oxide reliability, bias temperature instability (BTI), and short-circuit capability for commercial SiC power MOSFETs with planar and trench structures are evaluated and compared in this work. The asymmetric trench MOSFET has the thickest gate oxide among the tested devices, which provides the highest extrapolated gate oxide lifetime from the constant-voltage time-dependent dielectric breakdown (TDDB) measurements. Also, the asymmetric trench structure shows the longest short-circuit withstand time (SCWT) benefiting from the adjacent P+ regions. However, the asymmetric trench MOSFETs show a high threshold voltage shift during the BTI measurements under AC stress, indicating more at or near SiC/SiO2 interface defects. The double trench MOSFETs also show better short-circuit ruggedness, but no obvious advantages in the TDDB measurements and BTI results.

引用

页数：5

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