Radiation-hardened flip-flop for single event upset tolerance

被引:1
|
作者
Qi, Chunhua [1 ]
Ma, Guoliang [1 ]
Zhang, Yanqing [1 ]
Wang, Tianqi [1 ]
Rui, Erming [2 ]
Jiao, Qiang [2 ]
Liu, Chaoming [1 ]
Huo, Mingxue [1 ]
Zhai, Guofu [1 ]
机构
[1] Harbin Inst Technol, Harbin, Peoples R China
[2] China Astronaut Stand Inst, Beijing, Peoples R China
基金
中国博士后科学基金;
关键词
Radiation-hardened flip-flop; Single event upset; Single event transient; Transition detector; HIGH-PERFORMANCE; LATCH; CODES; COST;
D O I
10.1108/MI-06-2022-0110
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
PurposeThe purpose of this paper is to present a transition detector (TD)-based radiation hardened flip-flop (TDRH-FF) for single event upset (SEU). Design/methodology/approachWith SEU recovery and single event transient (SET) detector mechanism, the TDRH-FF can tolerate SEU during hold mode and generate a warning signal for architecture-level recovery during transport mode when input signal contains SET. Evaluation results show that the TDRH-FF outperforms comparable comprehensive performance. FindingsSimulation results show that 1) the mean pulse width of the correction glitches (at full width half maximum) of TDRH-FF is less than 10 ps; 2) the area overhead of TDRH-FF is similar to the EVFERST-FF, BISER-FF and DNURHL-FF; 3) TDRH-FF has the same average power consumption as SETTOF, and moderate PDP and Ps values among these compared FFs. Originality/valueIn this paper, a TD-based TDRH-FF is proposed to solve the problems in the previous design. And the main contributions of the proposed TDRH-FF are summarized: Minimum size transistors are used in the proposed TD which leads to a considerable decrease in area overheads and propagation delay (resulting in an ignorable correction glitch); and compared with other radiation hardened flip-flop, TDRH-FF outperforms comparable comprehensive performance.
引用
收藏
页码:89 / 95
页数:7
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