Generic Semi-Physical SiC MOSFET Model for the Simulation of Switching Processes

被引：0

作者：

Hofstetter, Patrick ^{[1
]}

Hofmann, Viktor ^{[1
]}

Bakran, Mark-M. ^{[2
]}

机构：

[1] Innomot Siemens Business, Vogelweiherstr 1-15, D-90441 Nurnberg, Germany

[2] Univ Bayreuth, Univ Str 30,NW 3, D-95447 Bayreuth, Germany

来源：

2023 25TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS, EPE'23 ECCE EUROPE | 2023年

关键词：

SiC MOSFET; Device modelling; Wide Bandgap devices; Parasitic elements; Double pulse test;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

This paper proposes a simple generic semi-physical SiC MOSFET model for the simulation of switching processes. This can be used for the optimization of losses or to test gate drive techniques. The model only needs parameters, which can be obtained from the data sheet. The Common Source elements and dynamic transfer characteristics are the only exceptions and can easily be measured. The proposed model is finally compared to switching measurements and to a SPICE model of the manufacturer to prove the applicability and accuracy.

引用

页数：8

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