Effect of ITO electrode on conductance quantization and multi-level cells in TiN/SiOx/ITO devices

被引：8

作者：

Jeon, Beomki ^{[1
]}

Kim, Sungjun ^{[1
]}

机构：

[1] Dongguk Univ, Div Elect & Elect Engn, Seoul 04620, South Korea

来源：

CERAMICS INTERNATIONAL | 2023年 / 49卷 / 01期

基金：

新加坡国家研究基金会;

关键词：

Conductance quantization; Multilevel conductance; High-density memory; ITO electrode; MEMORY;

D O I：

10.1016/j.ceramint.2022.09.007

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this work, we study TiN/SiOx/ITO devices to implement conductance quantization and multilevel conductance for high-density memory applications. We observed stepwise conductance with integer and half-integer multiples under pulse and DC voltages. We predict this device's conductance quantization to be a combined result of the formation and rupture of oxygen vacancies in SiOx film and the formation of O-2 rich ITO layers due to the oxidation reaction between ITO and SiOx. Furthermore, it was found that TiN/SiOx/ITO RRAM devices could stably endure each conductance level.

引用

页码：425 / 430

页数：6

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