Recent Advances on GaN-Based Micro-LEDs

被引：20

作者：

Zhang, Youwei ^{[1
]}

Xu, Ruiqiang ^{[1
]}

Kang, Qiushi ^{[2
]}

Zhang, Xiaoli ^{[1
]}

Zhang, Zi-hui ^{[2
]}

机构：

[1] Guangdong Univ Technol, Sch Phys & Optoelect Engn, Guangdong Prov Key Lab Informat Photon Technol, Guangzhou 510006, Peoples R China

[2] Guangdong Univ Technol, Sch Integrated Circuits, Guangzhou 510006, Peoples R China

来源：

MICROMACHINES | 2023年 / 14卷 / 05期

关键词：

GaN; micro-LED; non-radiative recombination; EQE; size effect; LIGHT-EMITTING-DIODES; PATTERNED SAPPHIRE SUBSTRATE; FULL-COLOR EMISSION; HIGH-EFFICIENCY; DISPLAY; GROWTH; TEMPERATURE; GREEN; SIZE; RECOMBINATION;

D O I：

10.3390/mi14050991

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

advantages for display, visible-light communication (VLC), and other novel applications. The smaller size of LEDs affords them the benefits of enhanced current expansion, fewer self-heating effects, and higher current density bearing capacity. Low external quantum efficiency (EQE) resulting from non-radiative recombination and quantum confined stark effect (QCSE) is a serious barrier for application of mu LEDs. In this work, the reasons for the poor EQE of mu LEDs are reviewed, as are the optimization techniques for improving the EQE of mu LEDs.

引用

页数：19

共 50 条

[1] A review on the low external quantum efficiency and the remedies for GaN-based micro-LEDs
Hang, Sheng
Chuang, Chia-Ming
Zhang, Yonghui
Chu, Chunshuang
Tian, Kangkai
Zheng, Quan
Wu, Tingzhu
Liu, Zhaojun
Zhang, Zi-Hui
Li, Qing
Kuo, Hao-Chung
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2021, 54 (15)
[2] Enhanced photoelectric performance of GaN-based Micro-LEDs by ion implantation
Liu, Shaogang
Han, Sancan
Xu, Chenchao
Xu, Huiwen
Wang, Xianying
Wang, Ding
Zhu, Yuankun
OPTICAL MATERIALS, 2021, 121
[3] Recent progress on micro-LEDs
Pandey, Ayush
Reddeppa, Maddaka
Mi, Zetian
LIGHT-ADVANCED MANUFACTURING, 2023, 4 (04): : 2 - 24
[4] High Bandwidth GaN-Based Micro-LEDs at Temperatures up to 400 °C
Rogers, Daniel J.
Xue, Haotian
Kish Jr, Fred A.
Hsiao, Fu-Chen
Pezeshki, Bardia
Tselikov, Alexander
Wierer Jr, Jonathan J.
IEEE PHOTONICS TECHNOLOGY LETTERS, 2024, 36 (17) : 1069 - 1072
[5] Investigation of GaN-Based Micro-LEDs with Effective Tetramethylammonium Hydroxide Treatment
Wang, Zhen-Jin
Ye, Xin-Liang
Su, Li-Yun
Tu, Wei-Chen
Yang, Chih-Chiang
Su, Yan-Kuin
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2024, 13 (02)
[6] Physical mechanisms on the size-effect in GaN-based Micro-LEDs
Wu, Zhuang
Ren, Kailin
Zhang, Xuesong
An, Yuan
Yin, Luqiao
Lu, Xiuzhen
Guo, Aiying
Zhang, Jianhua
MICRO AND NANOSTRUCTURES, 2023, 177
[7] Characteristics and techniques of GaN-based micro-LEDs for application in next-generation display
Wang, Zhou
Shan, Xinyi
Cui, Xugao
Tian, Pengfei
JOURNAL OF SEMICONDUCTORS, 2020, 41 (04)
[8] Fabrication and Characterization of GaN-Based Micro-LEDs on Silicon Substrate
王琦
余俊驰
陶涛
刘斌
智婷
岑旭
谢自力
修向前
周玉刚
郑有炓
张荣
Chinese Physics Letters, 2019, (08) : 94 - 97
[9] Analysis of Failure Mechanism of Reverse Leakage Current in GaN-based Micro-LEDs
Wang, Wei
Zhang, Tengfei
Wang, Shouyu
Faguang Xuebao/Chinese Journal of Luminescence, 2024, 45 (09): : 1539 - 1546
[10] Characteristics and techniques of GaN-based micro-LEDs for application in next-generation display
Zhou Wang
Xinyi Shan
Xugao Cui
Pengfei Tian
Journal of Semiconductors, 2020, (04) : 81 - 86

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