Interfacial Polarization Restriction for Ultrahigh Energy-Storage Density in Lead-Free Ceramics

被引:124
|
作者
Cao, Wenjun [1 ]
Lin, Renju [2 ]
Hou, Xu [3 ]
Li, Li [1 ,2 ]
Li, Feng
Bo, Defu [1 ]
Ge, Binghui [2 ]
Song, Dongsheng [2 ]
Zhang, Jian [4 ]
Cheng, Zhenxiang [5 ]
Wang, Chunchang [1 ]
机构
[1] Anhui Univ, Sch Mat Sci & Engn, Lab Dielect Funct Mat, Hefei 230601, Peoples R China
[2] Anhui Univ, Inst Phys Sci & Informat Technol, Hefei 230601, Peoples R China
[3] Hong Kong Polytech Univ, Dept Ind & Syst Engn, Hung Hom, Hong Kong 999077, Peoples R China
[4] Wenzhou Univ, Coll Elect & Elect Engn, Wenzhou 325035, Peoples R China
[5] Univ Wollongong, Inst Superconducting & Elect Mat, Squires Way, North Wollongong, NSW 2500, Australia
基金
中国国家自然科学基金; 澳大利亚研究理事会;
关键词
breakdown strengths; energy-storages; interfacial polarization; lead-free ceramics; BREAKDOWN STRENGTH; CAPACITORS;
D O I
10.1002/adfm.202301027
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Dielectric capacitors with high power densities are crucial for pulsed electronic devices and clean energy technologies. However, their breakdown strengths (E-b) strongly limit their power densities. Herein, by modifying the interfacial polarization by adjusting the difference in activation energies (Delta phi) between the grain and grain boundary phases, the significant enhancement of E-b in the (1-x)(0.94Na(0.5)Bi(0.5)TiO(3)-0.06BaTiO(3))-xCa(0.7)La(0.2)TiO(3) (NBT-BT-xCLT, x = 0, 0.18, 0.23, 0.28, 0.33, 0.38, and 0.43) ceramics is achieved. The results indicate that adding CLT introduces a super-paraelectric state, refines grain size, and, most importantly, decreases the Delta phi value. When Delta phi is tuned close to zero in the specific NBT-BT-0.38CLT sample, a significant boost in E-b value of 64 kV mm(-1) is obtained. As a result, the recoverable energy storage density of the ceramics reaches an unprecedented giant value of 15.1 J cm(-3) together with a high efficiency of 82.4%, as well as ultrafast discharge rate of 32 ns, and high thermal and frequency stability. The results demonstrate that interfacial polarization engineering holds huge promise for the development of dielectrics with high-energy-storage performance.
引用
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页数:11
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