Perovskite quantum dots (PeQDs) endowed with capping ligands exhibit impressive optoelectronic properties and enable for cost-efficient solution processing and exciting application opportunities. We synthesize and characterize three different PeQDs with the same cubic CsPbBr3 core, but which are distinguished by the ligand composition and density. PeQD-1 features a binary didodecyldimethylammonium bromide (DDAB) and octanoic acid capping ligand system, with a high surface density of 1.53 nm(-2), whereas PeQD-2 and PeQD-3 are coated by solely DDAB at a gradually lower surface density. We show that PeQD-1 endowed with highest ligand density features the highest dispersibility in toluene of 150 g/L, the highest photoluminescence quantum yield of 95% in dilute solution and 59% in a neat film, and the largest core-to-core spacing in neat thin films. We further establish that ions are released from the core of PeQD-1 when it is exposed to an electric field, although it comprises a dense coating of one capping ligand per four surface core atoms. We finally exploit these combined findings to the development of a light-emitting electrochemical cell (LEC), where the active layer is composed solely of solution-processed pure PeQDs, without additional electrolytes. In this device, the ion release is utilized as an advantage for the electrochemical doping process and efficient emissive operation of the LEC.
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Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Peoples R China
Univ Hong Kong, Shenzhen Inst Res & Innovat HKU SIRI, Pokfulam Rd, Hong Kong, Peoples R China
Jiangsu Normal Univ, Sch Phys & Elect Engn, Jiangsu Key Lab Adv Laser Mat & Devices, Xuzhou 221116, Jiangsu, Peoples R ChinaUniv Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Peoples R China
Tang, Fei
Su, Zhicheng
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Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Peoples R China
Univ Hong Kong, Shenzhen Inst Res & Innovat HKU SIRI, Pokfulam Rd, Hong Kong, Peoples R ChinaUniv Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Peoples R China
Su, Zhicheng
Ye, Honggang
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Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Peoples R China
Univ Hong Kong, Shenzhen Inst Res & Innovat HKU SIRI, Pokfulam Rd, Hong Kong, Peoples R China
Xi An Jiao Tong Univ, Dept Appl Phys, Xian 710049, Shaanxi, Peoples R ChinaUniv Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Peoples R China
Ye, Honggang
Zhu, Ye
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Hong Kong Polytech Univ, Dept Appl Phys, Hung Hom, Hong Kong, Peoples R ChinaUniv Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Peoples R China
Zhu, Ye
Dai, Jiyan
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Hong Kong Polytech Univ, Dept Appl Phys, Hung Hom, Hong Kong, Peoples R ChinaUniv Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Peoples R China
Dai, Jiyan
Xu, Shijie
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Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Peoples R China
Univ Hong Kong, Shenzhen Inst Res & Innovat HKU SIRI, Pokfulam Rd, Hong Kong, Peoples R ChinaUniv Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Peoples R China