Effect of Si on the evolution of plasticity mechanisms, grain refinement and hardness during high-pressure torsion of a non-equiatomic CoCrMnNi multi-principal element alloy

被引:25
作者
Kishore, Kaushal [1 ,2 ]
Chandan, Avanish Kumar [1 ,3 ]
Hung, Pham Tran [4 ]
Kumar, Saurabh [5 ]
Ranjan, Manish [6 ]
Kawasaki, Megumi [7 ]
Gubicza, Jeno [4 ]
机构
[1] Acad Sci & Innovat Res AcSIR, Ghaziabad 201002, India
[2] Tata Steel Ltd, Res & Dev, Jamshedpur 831007, India
[3] Natl Met Lab CSIR, Mat Engn Div, Jamshedpur 831007, India
[4] Eotvos Lorand Univ, Dept Mat Phys, POB 32, H-1518 Budapest, Hungary
[5] Indian Inst Technol, Dept Met Engn & Mat Sci, Mumbai 400076, India
[6] Indian Inst Technol, Dept Mat Sci & Engn, Kanpur 208016, India
[7] Oregon State Univ, Sch Mech Ind & Mfg Engn, Corvallis, OR 97331 USA
基金
美国国家科学基金会;
关键词
Dislocations (A); Microstructures (A); Strengthening mechanisms (A); Twinning (A); Multi -principal element alloy; HIGH-ENTROPY ALLOY; STACKING-FAULT ENERGY; TENSILE PROPERTIES; RATE-SENSITIVITY; DEFORMATION; MICROSTRUCTURE; STRENGTH; TEMPERATURE; SATURATION; BEHAVIOR;
D O I
10.1016/j.ijplas.2023.103720
中图分类号
TH [机械、仪表工业];
学科分类号
0802 ;
摘要
The present study unraveled the defining role of small silicon (Si) addition (5 atomic %) in dramatically altering the plasticity mechanisms, grain refinement and hardening response of a non-equiatomic CoCrMnNi multi-principal element alloy (MPEA) during high-pressure torsion (HPT) processing. Both the Si-free and the Si-added MPEAs had a face-centered cubic (FCC) structure and were subjected to a quasi-constrained HPT processing at 6 GPa pressure to different number of turns (0.5 and 5). Microstructure evolution was studied at the center and edge of the HPT-processed discs using X-ray diffraction line profile analysis (XLPA) and transmission electron microscopy (TEM). Si addition altered the predominant plasticity mechanism from micro-band formation to extensive occurrence of nano-twinning at the early stage of HPT processing. At later stages of HPT processing, both alloys exhibited deformation twinning but its propensity was considerably higher for the Si-added MPEA, as revealed by-50% higher twin fault probability. Additionally, the Si-added MPEA showed-30% higher dislocation density at any given stage of HPT processing compared to the Si-free MPEA. A significantly accelerated nano-structuring coupled with a finer saturation grain size was observed in the Si-added MPEA (34 nm for Si-free versus 23 nm for Si-added). These effects can be explained by the influence of Si addition on lowering the stacking fault energy (SFE) (from-40 mJ/m2 in Si-free to-20 mJ/m2 in Si-added MPEA) and increasing the solute pinning effect of Si on lattice defects. The plasticity mechanisms at nano-scale were also influenced by the presence of Si as confirmed by the for-mation of nano-twins and stacking faults inside the nano-grains for the Si-added and Si-free MPEAs, respectively. The differences in plasticity mechanisms and microstructure evolution resulted in enhanced hardness in the early stages of HPT processing for the Si-added MPEA, but the difference in hardness between the two alloys tended to be reduced at higher strains.
引用
收藏
页数:29
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