Overview of Wide/Ultrawide Bandgap Power Semiconductor Devices for Distributed Energy Resources

被引：30

作者：

Mazumder, Sudip K. ^{[1
]}

Voss, Lars F. ^{[2
]}

Dowling, Karen M. ^{[3
]}

Conway, Adam ^{[4
,5
]}

Hall, David

Kaplar, Robert J. ^{[6
]}

Pickrell, Gregory W. ^{[6
]}

Flicker, Jack ^{[6
]}

Binder, Andrew T. ^{[6
]}

Chowdhury, Srabanti ^{[7
]}

Veliadis, Victor ^{[8
]}

Luo, Fang ^{[9
]}

Khalil, Sameh ^{[10
]}

Aichinger, Thomas ^{[11
]}

Bahl, Sandeep R. ^{[12
]}

Meneghini, Matteo ^{[13
]}

Charles, Alain B. ^{[14
]}

机构：

[1] Univ Illinois, Dept Elect & Comp Engn, Chicago, IL 60607 USA

[2] Lawrence Livermore Natl Lab, Livermore, CA 94550 USA

[3] Delft Univ Technol TU Delft, Dept Microelect, NL-2628 CD Delft, Netherlands

[4] Raytheon Technol, Tucson, AZ 85756 USA

[5] David Hall is II VI, Fremont, CA 94538 USA

[6] Sandia Natl Labs, Albuquerque, NM 87185 USA

[7] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

[8] North Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27606 USA

[9] SUNY Stony Brook, Dept Elect & Comp Engn, Stony Brook, NY 11794 USA

[10] Infineon, El Segundo, CA 91316 USA

[11] Infineon Technol, El Segundo, CA 91316 USA

[12] Texas Instruments Inc, Dallas, TX USA

[13] Univ Padua, I-35122 Padua, Italy

[14] ABCsWorld Consulting, Redondo Beach, CA 90278 USA

来源：

IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS | 2023年 / 11卷 / 04期

关键词：

Devices; electrical; materials; optical; packaging; reliability; ultrawide bandgap (UWBG); wide bandgap (WBG); HIGH-TEMPERATURE; PULSED-POWER; GAN HEMT; IMPACT; DEGRADATION; SUBSTRATE; SWITCHES; DESIGN; MODULE; JFET;

D O I：

10.1109/JESTPE.2023.3277828

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This article provides an overview of power semiconductor devices (PSDs) for the distributed energy resource (DER) system. To begin with, an overview of electrically triggered silicon carbide (SiC) and gallium nitride (GaN) devices followed by a brief narration of ultrawide bandgap (UWBG) PSDs and, subsequently, an overview of optically activated PSDs encompassing photoconductive semiconductor switch (PCSS) and optical bipolar PSDs are provided. Finally, an overview of PSD packaging and reliability is captured.

引用

页码：3957 / 3982

页数：26

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