High Performance and Broadband photodetectors Based on SnS2/InSe Heterojunction

被引:3
|
作者
Wang, Bing-Hui [1 ,2 ]
Xing, Yan-Hui [1 ]
He, Wen-Xin [1 ,2 ]
Guan, Bao-Lu [1 ]
Han, Jun [1 ]
Dong, Sheng-Yuan [1 ,2 ]
Li, Jia-Hao [1 ,2 ]
Fang, Pei-Jing [2 ]
Han, Zi-Shuo [1 ]
Zhang, Bao-Shun [2 ]
Zeng, Zhong-Ming [2 ]
机构
[1] Beijing Univ Technol, Coll Microelect, Key Lab Optoelect Technol, Minist Educ, Beijing 100124, Peoples R China
[2] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Nanofabricat Facil, Suzhou 215123, Peoples R China
基金
北京市自然科学基金; 中国国家自然科学基金;
关键词
two-dimensional material; heterojunction; Broadband photodetectors;
D O I
10.11972/j.issn.1001-9014.2023.05.011
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We reported a broadband photodetector with a spectral range of 365-965 nm, based on a SnS2/InSe vertical heterojunction. In this device, InSe serves as the optical absorption layer, effectively extending the spectral range, while SnS2 functions as the transmission layer, forming a heterojunction with InSe to facilitate separation of electron-hole pairs and enhance the responsivity. The photodetector exhibits a responsivity of 813 A/W under 365 nm. Moreover, it still maintained a high responsivity of 371 A/W, an external quantum efficiency of 1. 3 x 105%, a specific detectivity of 3. 17 x 1012 Jones, and a response time of 27 ms under 965 nm illumination. The above investigation provides a new approach for broadband photodetectors with high responsivity.
引用
收藏
页码:659 / 665
页数:7
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