Magnetic coupling governed pinning directions in magnetic tunnel junctions under magnetic field annealing with zero magnetic field cooling

被引:0
作者
Chen, Weibin [1 ]
Yan, Shaohua [2 ]
Cao, Zhiqiang [2 ]
Lu, Shiyang [2 ]
Zhao, Xiaonan [1 ]
Hao, Runrun [2 ]
Zhou, Zitong [2 ]
Li, Zhi [2 ]
Zhang, Kun [2 ]
Yan, Shishen [1 ]
Leng, Qunwen [1 ,2 ]
机构
[1] Shandong Univ, Sch Phys, State Key Lab Crystal Mat, Jinan 250100, Peoples R China
[2] Beihang Univ, Fert Beijing Inst, Sch Integrated Circuit Sci & Engn, MIIT Key Lab Spintron, Beijing 100191, Peoples R China
基金
中国国家自然科学基金;
关键词
Bridges - Magnetic couplings - Tunnel junctions;
D O I
10.1007/s11432-021-3467-5
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
ConclusionThis study demonstrates the manipulation of the pinning direction in MTJs with varying tIrMn under the zero magnetic field cooling process, which results from the competition between the exchange bias coupling and interlayer coupling through the SAF layer. Our results clarify the coupling mechanism for determining the pinning direction of MTJs under the zero magnetic field cooling treatment, which can guide the design scheme of full Wheatstone bridge-based TMR sensors.
引用
收藏
页数:2
相关论文
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