Effect of Precursor Gas on Growth Temperature and Electrical Conduction of Carbon Nanowalls in Microwave Plasma-Enhanced Chemical Vapor Deposition

被引：1

作者：

Huang, Lei ^{[1
]}

Ikematsu, Hiroto ^{[1
]}

Kato, Yoshimine ^{[2
]}

Teii, Kungen ^{[1
]}

机构：

[1] Kyushu Univ, Dept Adv Energy Sci & Engn, Fukuoka 8168580, Japan

[2] Kyushu Univ, Dept Mat Sci & Engn, Fukuoka 8190395, Japan

来源：

IEEE TRANSACTIONS ON PLASMA SCIENCE | 2023年 / 51卷 / 02期

基金：

日本学术振兴会;

关键词：

Plasma temperature; Substrates; Plasmas; Temperature distribution; Carbon; Temperature measurement; Methane; Amorphous carbon; chemical vapor deposition (CVD); electronic transport; microwave; vertical graphene; RAMAN-SPECTRA; THIN-FILMS; NANODIAMOND; ELECTRODE;

D O I：

10.1109/TPS.2022.3204458

中图分类号：

O35 [流体力学]; O53 [等离子体物理学];

学科分类号：

070204 ; 080103 ; 080704 ;

摘要：

microwave plasmas are used to prepare nitrogen-incorporated carbon nanowalls (CNWs) by chemical vapor deposition using acetylene and methane as precursor gases. The growth temperature range for acetylene is shown to be totally lower than that (> 1000 ?) for methane, which is attributed to the difference in degree of hydrogenation of radical species in the two plasmas. The structural order and cluster size of sp(2) carbon phase in CNWs characterized by the Raman spectroscopy increase initially and, then, decrease with temperature in each temperature range, showing the same trend as the inverse of the sheet resistance of CNWs. The results indicate that the carrier transport in CNWs depends exclusively on the microstructure of sp(2) carbon phase, despite a large difference in the growth temperature range depending on the precursor gas.

引用

页码：298 / 302

页数：5

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