In this paper, we systematically studied the effect of substrate surface roughness on the electrochromic and mechanical properties of NiO films deposited on FTO conductive glass by magnetron sputtering. Results showed that increasing substrate surface roughness led to an increase in optical contrast of the film and decreased response time. The NiO film deposited on FTO (Ra 20 nm) had the largest optical contrast (54.7 % at 600 nm) and fastest response time (7.0 s and 1.7 s). Moreover, SEM, XPS, and EDS analyses revealed that the resultant increase in nanoporosity with increasing surface roughness was the main reason for this occurrence. The growth process of the NiO film was simulated by molecular dynamics, and the mechanism of the nanoporous structure was explained theoretically. The mechanical test showed that the composite hardness of FRa20 was 4.2 GPa, while the elastic modulus of the NiO film deposited on it was 74.9 GPa, which was better than all the other films. Thus, this study provides a novel and convenient approach for improving the electrochromic and mechanical prop-erties of NiO films.
机构:
East West Inst Technol, Res Ctr, Dept Chem, Bengaluru 560091, IndiaNMAM Inst Technol Visvesvaraya Technol Univ Belag, Dept Chem, Nitte 574110, India
Ravikumar, C. R.
;
Prashantha, S. C.
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East West Inst Technol, Res Ctr, Dept Chem, Bengaluru 560091, IndiaNMAM Inst Technol Visvesvaraya Technol Univ Belag, Dept Chem, Nitte 574110, India
Prashantha, S. C.
;
Maphanga, Rapela R.
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CSIR, Next Generat Enterprises & Inst, ZA-0001 Pretoria, South Africa
Univ Limpopo, Dept Phys, Private Bag X 1106, ZA-0727 Sovenga, South AfricaNMAM Inst Technol Visvesvaraya Technol Univ Belag, Dept Chem, Nitte 574110, India
Maphanga, Rapela R.
;
Lenz e Silva, Guilherme F. B.
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Univ Sao Paulo, Polytech Sch Engn, BR-05508030 Sao Paulo, BrazilNMAM Inst Technol Visvesvaraya Technol Univ Belag, Dept Chem, Nitte 574110, India
机构:
UNIV GUELPH,GUELPH WATERLOO CTR GRAD WORK CHEM,DEPT CHEM,GUELPH N1G 2W1,ONTARIO,CANADAUNIV GUELPH,GUELPH WATERLOO CTR GRAD WORK CHEM,DEPT CHEM,GUELPH N1G 2W1,ONTARIO,CANADA
机构:
East West Inst Technol, Res Ctr, Dept Chem, Bengaluru 560091, IndiaNMAM Inst Technol Visvesvaraya Technol Univ Belag, Dept Chem, Nitte 574110, India
Ravikumar, C. R.
;
Prashantha, S. C.
论文数: 0引用数: 0
h-index: 0
机构:
East West Inst Technol, Res Ctr, Dept Chem, Bengaluru 560091, IndiaNMAM Inst Technol Visvesvaraya Technol Univ Belag, Dept Chem, Nitte 574110, India
Prashantha, S. C.
;
Maphanga, Rapela R.
论文数: 0引用数: 0
h-index: 0
机构:
CSIR, Next Generat Enterprises & Inst, ZA-0001 Pretoria, South Africa
Univ Limpopo, Dept Phys, Private Bag X 1106, ZA-0727 Sovenga, South AfricaNMAM Inst Technol Visvesvaraya Technol Univ Belag, Dept Chem, Nitte 574110, India
Maphanga, Rapela R.
;
Lenz e Silva, Guilherme F. B.
论文数: 0引用数: 0
h-index: 0
机构:
Univ Sao Paulo, Polytech Sch Engn, BR-05508030 Sao Paulo, BrazilNMAM Inst Technol Visvesvaraya Technol Univ Belag, Dept Chem, Nitte 574110, India
机构:
UNIV GUELPH,GUELPH WATERLOO CTR GRAD WORK CHEM,DEPT CHEM,GUELPH N1G 2W1,ONTARIO,CANADAUNIV GUELPH,GUELPH WATERLOO CTR GRAD WORK CHEM,DEPT CHEM,GUELPH N1G 2W1,ONTARIO,CANADA