Numerical analysis of emerging concept of perovskite/silicon heterojunction solar cells

被引:4
作者
Kumar, Manoj [1 ,2 ]
Kumar, Sushil [1 ,2 ]
机构
[1] CSIR Natl Phys Lab, Dr KS Krishnan Marg, New Delhi 110012, India
[2] Acad Sci & Innovat Res AcSIR, Ghaziabad 201002, India
关键词
Perovskite; Silicon heterojunction solar cell; Thickness and concentration optimization; Front and Back metal contact; Silicon interface defect states study; HALIDE PEROVSKITES; EFFICIENCY; SIMULATION; SILICON; PERFORMANCE; DESIGN;
D O I
10.1007/s10825-023-02035-7
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents insight into the emerging concept of planar perovskite/silicon heterojunction solar cells. Here, we report optimum efficiency of 26.46% for Pt/p-CH3NH3PbI3/n-cSi/Ag and 25.95% for Al/n-CH3NH3PbI3/p-cSi/Au heterojunction solar cells. Thickness and doping concentration optimizations of the (p/n)-CH3NH3PbI3 and (n/p)-c-Si layers were carried out using SCAPS-1D. Various front and back contact metals, including Al, Ag, Cu, Au and Pt, were analysed for these perovskite/silicon heterojunction solar cells. Al and Ag at the front contact with Au at the back contact exhibited maximum efficiency for n-CH3NH3PbI3/p-cSi heterojunction solar cells. Similarly, maximum efficiency was observed for Al and Ag at the back contact with Pt at the front contact for p-CH3NH3PbI3/n-cSi. Moreover, the impact of interface defect states on the performance was analysed considering the perovskite/silicon interface properties significantly governing the photo-generated charge carrier transport across the heterojunction. Pt/p-CH3NH3PbI3/n-cSi/Ag was more tolerant to perovskite/silicon interface defects than Al/n-CH3NH3PbI3/p-cSi/Au heterojunction solar cells.
引用
收藏
页码:1061 / 1074
页数:14
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