Impact of synthesis-induced disorder on the structural, electrical, and optical properties of BaTi1-xHfxO3, 0 < x < 0.08

被引：10

作者：

Elorika, P. ^{[1
,2
]}

Anwar, Sharmistha ^{[2
,3
]}

Anwar, Shahid ^{[1
,2
,4
]}

机构：

[1] CSIR, Inst Minerals & Mat Technol, Mat Chem Dept, Bhubaneswar 751013, India

[2] Acad Sci & Innovat Res AcSIR, Ghaziabad 201002, India

[3] CSIR, Inst Minerals & Mat Technol, Adv Mat Technol Dept, Bhubaneswar 751013, India

[4] CSIR, Inst Minerals & Mat Technol, Mat Chem Dept, Bhubaneswar 751013, Odisha, India

来源：

MATERIALS RESEARCH BULLETIN | 2023年 / 167卷

关键词：

Ferroelectric; Piezoelectric; Disorder; Oxygen vacancies; BARIUM-TITANATE; PIEZOELECTRIC PROPERTIES; DIELECTRIC-PROPERTIES; GRAIN-SIZE; FERROELECTRIC PROPERTIES; LATTICE DISTORTION; PHASE-TRANSITION; CHEMICAL-STATES; CERAMICS; BEHAVIOR;

D O I：

10.1016/j.materresbull.2023.112424

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigated the effect of hafnium (Hf4+) substitution on the structural, morphology, electrical, and optical properties of barium titanate (BT), prepared via the modified (low-temperature sintered) solid-state reaction route. The structural refinement confirmed the formation of a single phase for pure and a mixture of phases for Hf-doped BT. The presence of [TiO6] and [HfO6] octahedra was confirmed by Raman analysis. The XPS analysis confirmed the formation of structural disordering associated with oxygen vacancies. The highest piezoelectric charge coefficient of 193 pC/N was found for BHT-5 (5% Hf). An energy storage efficiency & GE; 65% makes all the ceramics suitable for high-energy-density capacitors applications. With an increase in Hf4+ content, the optical bandgap widened. The direct optical bandgap ranged from 2.783 to 2.892 eV, making them ideal for optoelectronic applications. The presence of Ti3+/Hf3+ ions decreased the optical bandgap for all compositions.

引用

页数：13

共 59 条

[21] Microstructure, calorimetric and dielectric investigation of hafnium doped barium titanate ceramics [J].