Impact of synthesis-induced disorder on the structural, electrical, and optical properties of BaTi1-xHfxO3, 0 < x < 0.08

被引:10
作者
Elorika, P. [1 ,2 ]
Anwar, Sharmistha [2 ,3 ]
Anwar, Shahid [1 ,2 ,4 ]
机构
[1] CSIR, Inst Minerals & Mat Technol, Mat Chem Dept, Bhubaneswar 751013, India
[2] Acad Sci & Innovat Res AcSIR, Ghaziabad 201002, India
[3] CSIR, Inst Minerals & Mat Technol, Adv Mat Technol Dept, Bhubaneswar 751013, India
[4] CSIR, Inst Minerals & Mat Technol, Mat Chem Dept, Bhubaneswar 751013, Odisha, India
关键词
Ferroelectric; Piezoelectric; Disorder; Oxygen vacancies; BARIUM-TITANATE; PIEZOELECTRIC PROPERTIES; DIELECTRIC-PROPERTIES; GRAIN-SIZE; FERROELECTRIC PROPERTIES; LATTICE DISTORTION; PHASE-TRANSITION; CHEMICAL-STATES; CERAMICS; BEHAVIOR;
D O I
10.1016/j.materresbull.2023.112424
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We investigated the effect of hafnium (Hf4+) substitution on the structural, morphology, electrical, and optical properties of barium titanate (BT), prepared via the modified (low-temperature sintered) solid-state reaction route. The structural refinement confirmed the formation of a single phase for pure and a mixture of phases for Hf-doped BT. The presence of [TiO6] and [HfO6] octahedra was confirmed by Raman analysis. The XPS analysis confirmed the formation of structural disordering associated with oxygen vacancies. The highest piezoelectric charge coefficient of 193 pC/N was found for BHT-5 (5% Hf). An energy storage efficiency & GE; 65% makes all the ceramics suitable for high-energy-density capacitors applications. With an increase in Hf4+ content, the optical bandgap widened. The direct optical bandgap ranged from 2.783 to 2.892 eV, making them ideal for optoelectronic applications. The presence of Ti3+/Hf3+ ions decreased the optical bandgap for all compositions.
引用
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页数:13
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