Spin-Polarized Edge-State Transport in L-Shaped MoS2 Nanodevice Modulated by Exchange Field and Electric Field

被引:0
作者
Feng, Bing-Yang [1 ]
Ye, En-Jia [1 ]
Sun, Yun-Lei [2 ]
机构
[1] Jiangnan Univ, Sch Sci, Wuxi 214122, Peoples R China
[2] Hangzhou City Univ, Sch Informat & Elect Engn, Hangzhou 310015, Peoples R China
来源
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2023年 / 260卷 / 07期
基金
中国国家自然科学基金;
关键词
edge states; electronic transport; MoS2; spin polarization; tight-binding model; SINGLE-LAYER MOS2; VALLEY POLARIZATION; SPINTRONICS; ELECTRONICS; MONOLAYERS; GRAPHENE;
D O I
10.1002/pssb.202200606
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Herein, the spin-polarized edge-state transport properties in L-shaped zigzag MoS2 nanodevice (L-zMoS(2)ND) are investigated based on tight-binding model, Green's function method, and ballistic transport theory. The spin conductance and spin polarization are calculated by considering external exchange field and electric field. It is shown in the results that the spin conductance is closely related to the configuration of atomic non-consistence on the edge of L-zMoS(2)ND. Meanwhile, the spin conductance is determined by the spin channel opening on the edge, which can be modulated by external fields. The configuration characteristic and external fields give rise to effects of sublattice mismatch and spin mismatch on the edge channels, respectively. As a consequence, mismatch effects are actually employed to modulate the spin channel on the edge of L-zMoS(2)ND, and 100% spin polarization is realized selectively. Moreover, the corresponding local density of states distributions are plotted to reveal the modulation of the spin-resolved edge-state and the spin-filtering effects in the real space. These spin-polarized edge-state transport properties in L-zMoS(2)ND can have potential application in various kinds of spin valves and spin filters in nanocircuits.
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页数:10
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