Modulating the density of silicon nanowire arrays for high-performance hydrovoltaic devices

Hydrovoltaic devices (HDs) based on silicon nanowire (SiNW) arrays have received intensive attention due to their simple preparation, mature processing technology, and high output power. Investigating the impact of structure parameters of SiNWs on the performance of HDs can guide the optimization of the devices, but related research is still not sufficient. This work studies the effect of the SiNW density on the performance of HDs. SiNW arrays with different densities were prepared by controlling the react time of Si wafers in the seed solution (t seed) in metal-assisted chemical etching. Density of SiNW array gradually decreases with the increase of t seed. HDs were fabricated based on SiNW arrays with different densities. The research results indicate that the open-circuit voltage gradually decreases with increasing t seed, while the short-circuit current first increases and then decreases with increasing t seed. Overall, SiNW devices with t seed of 20 s and 60 s have the best output performance. The difference in output performance of HDs based on SiNWs with different densities is attributed to the difference in the gap sizes between SiNWs, specific surface area of SiNWs, and the number of SiNWs in parallel. This work gives the corresponding relationship between the preparation conditions of SiNWs, array density, and output performance of hydrovoltaic devices. Density parameters of SiNW arrays with optimized output performance and corresponding preparation conditions are revealed. The relevant results have important reference value for understanding the mechanism of HDs and designing structural parameters of SiNWs for high-performance hydrovoltaic devices.