Steady-state junction current distribution in p-n GaN diodes measured using low-energy electron microscopy (LEEM)

被引：4

作者：

Ho, Wan Ying ^{[1
]}

Johnson, Cameron W. ^{[2
]}

Tak, Tanay ^{[1
]}

Sauty, Mylene ^{[3
]}

Chow, Yi Chao ^{[1
]}

Nakamura, Shuji ^{[1
,4
]}

Schmid, Andreas ^{[2
]}

Peretti, Jacques ^{[3
]}

Weisbuch, Claude ^{[1
,3
]}

Speck, James S. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Mat Dept, Santa Barbara, CA 93106 USA

[2] Lawrence Berkeley Natl Lab, Mol Foundry, One Cyclotron Rd,Bldg 67, Berkeley, CA 94720 USA

[3] Ecole Polytech, Lab Phys Matiere Condensee, CNRS, IP Paris, F-91120 Palaiseau, France

[4] Univ Calif Santa Barbara, Dept Elect Engn, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 2023年 / 123卷 / 03期

基金：

美国国家科学基金会;

关键词：

LIGHT-EMITTING-DIODES; SURFACES; OXIDE;

D O I：

10.1063/5.0153947

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the measurement of the lateral distribution of the junction current of an electrical biased p-n GaN diode by electron emission microscopy using a low-energy electron microscope. The vacuum level at the surface of the diode was lowered by deposition of cesium to achieve negative electron affinity, allowing overflow electrons at the surface of the biased diodes to be emitted and their spatial distribution imaged. The results were compared to the literature, and a good match with analytical solutions by Joyce and Wemple [J. Appl. Phys. 41, 3818 (1970)] was obtained.

引用

页数：6

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