Steady-state junction current distribution in p-n GaN diodes measured using low-energy electron microscopy (LEEM)

被引：4

作者：

Ho, Wan Ying ^{[1
]}

Johnson, Cameron W. ^{[2
]}

Tak, Tanay ^{[1
]}

Sauty, Mylene ^{[3
]}

Chow, Yi Chao ^{[1
]}

Nakamura, Shuji ^{[1
,4
]}

Schmid, Andreas ^{[2
]}

Peretti, Jacques ^{[3
]}

Weisbuch, Claude ^{[1
,3
]}

Speck, James S. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Mat Dept, Santa Barbara, CA 93106 USA

[2] Lawrence Berkeley Natl Lab, Mol Foundry, One Cyclotron Rd,Bldg 67, Berkeley, CA 94720 USA

[3] Ecole Polytech, Lab Phys Matiere Condensee, CNRS, IP Paris, F-91120 Palaiseau, France

[4] Univ Calif Santa Barbara, Dept Elect Engn, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 2023年 / 123卷 / 03期

基金：

美国国家科学基金会;

关键词：

LIGHT-EMITTING-DIODES; SURFACES; OXIDE;

D O I：

10.1063/5.0153947

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the measurement of the lateral distribution of the junction current of an electrical biased p-n GaN diode by electron emission microscopy using a low-energy electron microscope. The vacuum level at the surface of the diode was lowered by deposition of cesium to achieve negative electron affinity, allowing overflow electrons at the surface of the biased diodes to be emitted and their spatial distribution imaged. The results were compared to the literature, and a good match with analytical solutions by Joyce and Wemple [J. Appl. Phys. 41, 3818 (1970)] was obtained.

引用

页数：6

共 25 条

[1]

[Anonymous], 2022, TVIPS TEMCAM F SERIE

[2] Optical properties of indium tin oxide and fluorine-doped tin oxide surfaces: correlation of reflectivity, skin depth, and plasmon frequency with conductivity [J].

Brewer, SH ;

Franzen, S .

JOURNAL OF ALLOYS AND COMPOUNDS, 2002, 338 (1-2) :73-79

[3] Current crowding and optical saturation effects in GaInN/GaN light-emitting diodes grown on insulating substrates [J].

Guo, X ;

Schubert, EF .

APPLIED PHYSICS LETTERS, 2001, 78 (21) :3337-3339

[4] Measurement of minority carrier diffusion length in p-GaN using electron emission spectroscopy (EES) [J].

Ho, Wan Ying ;

Chow, Yi Chao ;

Nakamura, Shuji ;

Peretti, Jacques ;

Weisbuch, Claude ;

Speck, James S. .

APPLIED PHYSICS LETTERS, 2023, 122 (21)

[5] Detection of hot electrons originating from an upper valley at ∼1.7 eV above the F valley in wurtzite GaN using electron emission spectroscopy [J].

Ho, Wan Ying ;

Alhassan, Abdullah I. ;

Lynsky, Cheyenne ;

Chow, Yi Chao ;

Myers, Daniel J. ;

DenBaars, Steven P. ;

Nakamura, Shuji ;

Peretti, Jacques ;

Weisbuch, Claude ;

Speck, James S. .

PHYSICAL REVIEW B, 2023, 107 (03)

[6] Quantitative correlation of hot electron emission to Auger recombination in the active region of c-plane blue III-N LEDs [J].

Ho, Wan Ying ;

Chow, Yi Chao ;

Myers, Daniel J. ;

Wu, Feng ;

Peretti, Jacques ;

Weisbuch, Claude ;

Speck, James S. .

APPLIED PHYSICS LETTERS, 2021, 119 (05)

[7] A method for current spreading analysis and electrode pattern design in light-emitting diodes [J].

Hwang, Sungmin ;

Shim, Jongin .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (05) :1123-1128

[8] Origin of electrons emitted into vacuum from InGaN light emitting diodes [J].

Iveland, Justin ;

Piccardo, Marco ;

Martinelli, Lucio ;

Peretti, Jacques ;

Choi, Joo Won ;

Young, Nathan ;

Nakamura, Shuji ;

Speck, James S. ;

Weisbuch, Claude .

APPLIED PHYSICS LETTERS, 2014, 105 (05)

[9] Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop [J].

Iveland, Justin ;

Martinelli, Lucio ;

Peretti, Jacques ;

Speck, James S. ;

Weisbuch, Claude .

PHYSICAL REVIEW LETTERS, 2013, 110 (17)

[10] Quantifying work function differences using low-energy electron microscopy: The case of mixed-terminated strontium titanate [J].

Jobst, Johannes ;

Boers, Laurens M. ;

Yin, Chunhai ;

Aarts, Jan ;

Tromp, Rudolf M. ;

van der Molen, Sense Jan .

ULTRAMICROSCOPY, 2019, 200 :43-49

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