Sign reversal of planar Hall effect with temperature in La-doped Sr2IrO4 films

被引：6

作者：

Liu, Mingrui ^{[1
]}

Yue, Jianing ^{[2
]}

Meng, Jianchao ^{[3
]}

Shao, Tingna ^{[2
]}

Yao, Chunli ^{[2
]}

Sun, Xiaojuan ^{[1
]}

Nie, Jiacai ^{[2
]}

Li, Dabing ^{[1
]}

机构：

[1] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, State Key Lab Luminescence & Applicat, Changchun 130033, Peoples R China

[2] Beijing Normal Univ, Dept Phys, Beijing 100875, Peoples R China

[3] Inner Mongolia Univ Technol, Coll Sci, Hohhot 010051, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2023年 / 122卷 / 02期

基金：

中国国家自然科学基金;

关键词：

ANISOTROPIC MAGNETORESISTANCE; TRANSPORT; SENSOR;

D O I：

10.1063/5.0134002

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electron-doped Sr2IrO4 is the best candidate for unconventional superconductivity, but direct evidence of superconductivity has not been experimentally confirmed. Therefore, it is urgent to explore the complex and rich physical properties caused by doping. The planar Hall effect (PHE) is a sensitive technique for the characterization of intrinsic magnetic properties in magnetic thin films and is applied widely in spintronic devices. In this work, the PHE for La-doped Sr2IrO4 films as a function of the magnetic field direction and temperature exhibited unique properties caused by electron doping. The amplitude of PHE is proportional to the strength of the applied magnetic field. Remarkably, as the temperature increased, a sign reversal of angle-dependent PHE occurred at 90 K, which indicated the change of magnetic anisotropy. Subsequent variable-temperature traditional Hall measurements and time-resolved optical studies eliminated different types of carrier interactions. The anisotropic magnetoresistance measurements indicated that the sign reversal can be attributed to the changes of a spin structure after electron doping, and the reversal temperature is related to the strength of ferromagnetism. These results provide a platform to study the magnetic interactions and suggest the possibility of realizing thermal controllable magnetic sensor devices in electron-doped Sr2IrO4 films.

引用

页数：6