1D group V-VI-VII ternary nanowires: moderate band gaps, easy to exfoliate from bulk, and unexpected ferroelectricity

被引:8
|
作者
Zhang, Fumin [1 ,2 ,3 ]
Chen, Weizhen [1 ,2 ,3 ]
Zhang, Yungeng [1 ,2 ,3 ]
Yin, Huabing [1 ,2 ,3 ]
机构
[1] Henan Univ, Joint Ctr Theoret Phys, Sch Phys & Elect, Kaifeng 475004, Peoples R China
[2] Henan Univ, Inst Computat Mat Sci, Sch Phys & Elect, Kaifeng 475004, Peoples R China
[3] Henan Univ, Sch Phys & Elect, Int Joint Res Lab New Energy Mat & Devices Henan P, Kaifeng 475004, Peoples R China
基金
中国国家自然科学基金;
关键词
CRYSTAL-STRUCTURE; BLACK PHOSPHORUS; PERFORMANCE; FABRICATION; TRANSITION; STABILITY; INPLANE; INDIUM;
D O I
10.1039/d2cp05581c
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
One-dimensional nanowires have emerged as compelling ideal materials due to their characteristic structure, properties, and applications in nanodevices. Herein, based on experimental vdW-chain bulk crystals, a series of one-dimensional (1D) X(V)Y(VI)Z(VII) (X = As, Sb, Bi; Y = S, Se, Te; Z = Cl, Br, I) ternary nanowires are theoretically investigated. Such exfoliated 1D nanowires possess excellent stability and moderate band gaps (1.76-3.16 eV). The calculated electron mobilities were found to reach a magnitude of 10(2) cm(2) V-1 s(-1) and even up to 322.95 cm(2) V-1 s(-1) for 1D BiSeI nanowires, which are much larger than those of the previously reported 1D materials. Furthermore, the appropriate band edge alignments and considerable optical absorption endow 1D X(V)Y(VI)Z(VII) nanowires with prospective photocatalytic properties for water splitting. Notably, AsSI and AsSeI nanowires possess a unique non-centrosymmetric structure and exhibit promising 1D ferroelectricity. Large spontaneous polarization values, P-s, of 11.31 x 10(-10) and 6.92 x 10(-10) C m(-1) are obtained for 1D AsSI and AsSeI nanowires, respectively, and such 1D ferroelectricity can be regulated by intra-chain strains. Our calculations not only broaden the family of 1D materials but also reveal their great potential applications in electronic, optoelectronic, and ferroelectric devices.
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页码:6112 / 6120
页数:9
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