Tunable biaxial strain device for low-dimensional materials

被引:4
作者
Pasquier, Vincent [1 ]
Scarfato, Alessandro [1 ]
Martinez-Castro, Jose [1 ]
Guipet, Antoine [1 ]
Renner, Christoph [1 ]
机构
[1] Univ Geneva, DQMP, 24 Quai Ernest Ansermet, CH-1211 Geneva, Switzerland
基金
瑞士国家科学基金会;
关键词
MONOLAYER; RAMAN; MOS2;
D O I
10.1063/5.0100898
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Strain is attracting much interest as a mean to tune the properties of thin exfoliated two-dimensional materials and their heterostructures. Numerous devices to apply tunable uniaxial strain are proposed in the literature, but only few for biaxial strain, often with a trade-off between maximum strain and uniformity, reversibility, and device size. We present a compact device that allows for the controlled application of uniform in-plane biaxial strain, with maximum deformation and uniformity comparable to those found in much larger devices. Its performance and strain uniformity over the sample area are modeled using finite element analysis and demonstrated by measuring the response of exfoliated 2H-MoS2 to strain by Raman spectroscopy. (c) 2023 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license
引用
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页数:5
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