Anomalous Non-Equilibrium State Response of Long-Wavelength HgCdTe Infrared Detectors

被引：22

作者：

Dai, Fuxing ^{[1
,2
]}

Wang, Fang ^{[1
]}

Ge, Haonan ^{[1
]}

Xie, Runzhang ^{[1
]}

Jiang, Ruiqi ^{[1
]}

Shi, Hangrui ^{[1
,2
]}

Liu, Han ^{[1
]}

Hu, Gangjian ^{[3
]}

Shen, Liang ^{[3
]}

Li, Tianxin ^{[1
]}

Hu, Weida ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Lab Infrared Phys, Shanghai 200083, Peoples R China

[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

[3] Jilin Univ, Coll Elect Sci & Engn, Int Ctr Future Sci, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2024年 / 45卷 / 01期

关键词：

Non-equilibrium states; HgCdTe; longwavelength infrared; laser beam-induced current; BEAM-INDUCED CURRENT; ARRAYS;

D O I：

10.1109/LED.2023.3335419

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Nowadays, long-wavelength infrared (LWIR) HgCdTe infrared detectors are developing towards high operating temperatures. There remains a lack of knowledge on the operational mechanism of LWIR HgCdTe at room temperature. This letter conducted an in-depth study on the anomalous non-equilibrium state of LWIR HgCdTe at room temperature. Through laser beam-induced current (LBIC) photocurrent mapping testing, it was found that there are high-energy non-equilibrium states. The junction formed by non-equilibrium states has a minority carrier diffusion length of up to 30 mu m through LBIC line profile formula fitting and a carrier lifetime of up to 45 ns through time-resolved photoluminescence. It indicated that high-energy photons can excite electrons in LWIR HgCdTe to transition to a stable high-energy state and participate in the carrier transport process.

引用

页码：16 / 19

页数：4

共 22 条

[1] Recent infrared detector technologies, applications, trends and development of HgCdTe based cooled infrared focal plane arrays and their characterization [J].

Bhan, R. K. ;

Dhar, V. .

OPTO-ELECTRONICS REVIEW, 2019, 27 (02) :174-193

[2] ELECTRICAL DOPING OF HGCDTE BY ION-IMPLANTATION AND HEAT-TREATMENT [J].

DESTEFANIS, GL .

JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) :700-722

[3]

Ding R., 2020, Infr. Laser Eng., V49

[4] A hybrid surface passivation on HgCdTe long wave infrared detector with in-situ CdTe deposition and high-density hydrogen plasma modification [J].

Hu, W. D. ;

Chen, X. S. ;

Ye, Z. H. ;

Lu, W. .

APPLIED PHYSICS LETTERS, 2011, 99 (09)

[5] Dependence of Ion-Implant-Induced LBIC Novel Characteristic on Excitation Intensity for Long-Wavelength HgCdTe-Based Photovoltaic Infrared Detector Pixel Arrays [J].

Hu, Wei-Da ;

Chen, Xiao-Shuang ;

Ye, Zhen-Hua ;

Feng, A-Li ;

Yin, Fei ;

Zhang, Bo ;

Liao, Lei ;

Lu, Wei .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2013, 19 (05)

[6] 128 x 128 long-wavelength/mid-wavelength two-color HgCdTe infrared focal plane array detector with ultralow spectral cross talk [J].

Hu, Weida ;

Ye, Zhenhua ;

Liao, Lei ;

Chen, Honglei ;

Chen, Lu ;

Ding, Ruijun ;

He, Li ;

Chen, Xiaoshuang ;

Lu, Wei .

OPTICS LETTERS, 2014, 39 (17) :5184-5187

[7]

Jiao H., Sci. Adv., V8

[8] New insights into the ultimate performance of HgCdTe photodiodes [J].

Kopytko, M. ;

Rogalski, A. .

SENSORS AND ACTUATORS A-PHYSICAL, 2022, 339

[9] High-Operating Temperature HgCdTe: A Vision for the Near Future [J].

Lee, D. ;

Carmody, M. ;

Piquette, E. ;

Dreiske, P. ;

Chen, A. ;

Yulius, A. ;

Edwall, D. ;

Bhargava, S. ;

Zandian, M. ;

Tennant, W. E. .

JOURNAL OF ELECTRONIC MATERIALS, 2016, 45 (09) :4587-4595

[10] Development of long-wavelength infrared detector and its space-based application requirements [J].

Liu, Junku ;

Xiao, Lin ;

Liu, Yang ;

Cao, Longfei ;

Shen, Zhengkun .

CHINESE PHYSICS B, 2019, 28 (02)

← 1 2 3 →