Mechanically Robust Interface at Metal/Muscovite Quasi van der Waals Epitaxy

被引:1
|
作者
Chen, Jia-Wei [1 ]
Wei, Yun-Guan [1 ]
Lo, Hung-Yang [1 ]
Lu, Sicheng [2 ,3 ]
Chen, Yi-Che [4 ]
Lei, Chi-Fong [1 ]
Liu, Po-Liang [4 ,5 ]
Yu, Pu [2 ,3 ]
Tsou, Nien-Ti [1 ]
Yasuhara, Akira [6 ]
Wu, Wen-Wei [1 ]
Chu, Ying-Hao [1 ,7 ,8 ]
机构
[1] Natl Yang Ming Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30010, Taiwan
[2] Tsinghua Univ, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China
[3] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China
[4] Natl Chung Hsing Univ, Grad Inst Precis Engn, Taichung 402, Taiwan
[5] Natl Chung Hsing Univ, Innovat & Dev Ctr Sustainable Agr, Taichung 402, Taiwan
[6] JEOL Ltd, EM Business Unit, EM Applicat Dept, Tokyo 1968558, Japan
[7] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30013, Taiwan
[8] Acad Sinica, Inst Phys, Taipei 115, Taiwan
关键词
van der Waals epitaxy; muscovite; thermal actuation; flexible; STEM; TOTAL-ENERGY CALCULATIONS; GROWTH; METALS;
D O I
10.1021/acsami.3c09129
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Quasi van der Waals epitaxy is an approach to constructing the combination of 2D and 3D materials. Here, we quantify and discuss the 2D/3D interface structure and the corresponding features in metal/muscovite systems. High-resolution scanning transmission electron microscopy reveals the atomic arrangement at the interface. The theoretical results explain the formation mechanism and predict the mechanical robustness of these metal/muscovite quasi van der Waals epitaxies. The evidence of superior interface quality is delivered according to the outstanding performance of the designed systems in both retention (>10(5) s) and cycling tests (>10(5) cycles) through electromechanical measurements. With high-temperature X-ray reciprocal space mapping, the unique anisotropy of thermal expansion is discovered and predicted to sustain the thermal stress with a sizable thermal actuation. A maximum bending curvature of 264 m(-1) at 243 degree celsius can be obtained in the silver/muscovite heteroepitaxy. The electrothermal and photothermal methods show a fast response to thermal stress and demonstrate the interface robustness.
引用
收藏
页码:47715 / 47724
页数:10
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