Kerr nonlinearity and group velocity dispersion of InGaAs/InP and GaAsSb/InP waveguides in the mid-infrared

被引:3
作者
Zhang, Kevin [1 ]
Boehm, Gerhard [1 ]
Belkin, Mikhail A. [1 ]
机构
[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany
基金
欧盟地平线“2020”;
关键词
FREQUENCY COMB GENERATION; SPANNING SUPERCONTINUUM GENERATION; QUANTUM CASCADE LASERS; MULTIPHOTON ABSORPTION; BROAD-BAND; MU-M; SILICON; REFRACTION; SPECTROSCOPY; ALGAAS;
D O I
10.1063/5.0151013
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We report measurements of Kerr nonlinearity and group velocity dispersion in In0.53Ga0.47As/InP and GaAs0.51Sb0.49/InP ridge waveguides in the mid-infrared using four-wave mixing at lambda approximate to 5 mu m. Measured values of Kerr nonlinearity are significantly higher compared to those reported for any other materials systems suitable for building dielectric waveguides with low losses and low group velocity dispersion in the mid-infrared (lambda approximate to 3-15 mu m). Our measurements establish both In0.53Ga0.47As/InP and GaAs0.51Sb0.49/InP materials as promising platforms for the development of on-chip mid-infrared frequency comb generation and supercontinuum light sources. (c) 2023 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
引用
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页数:6
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