Two-dimensional chalcogenide-based ferromagnetic semiconductors

被引:2
|
作者
Wu, Yanling
Li, Jun
Liu, Yong [1 ]
机构
[1] Yanshan Univ, State Key Lab Metastable Mat Sci & Technol, Sch Sci, Qinhuangdao 066004, Peoples R China
基金
中国国家自然科学基金;
关键词
ferromagnetism; two-dimensional; chalcogenide-based; semiconductor; MANGANESE BISMUTH TELLURIDES; MAGNETIC-PROPERTIES; TOPOLOGICAL INSULATOR; 2D MATERIALS; CRXTE3; X; MONOLAYER; CRYSTAL; TEMPERATURE; TRANSITION; SI;
D O I
10.1088/1361-648X/acaa7e
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Two-dimensional (2D) magnetic materials draw an enormous amount of attention due to their novel physical properties and potential spintronics device applications. Room-temperature ferromagnetic (FM) semiconductors have long been pursued in 2D magnetic materials, which show a long range magnetic order down to atomic-layer thickness. The intrinsic ferromagnetism has been predicted in a series of 2D materials and verified in experiments and the magnetism can be modulated by multiple physical fields, exhibiting promising application prospects. In this review, we overview several types of 2D chalcogenide-based FM semiconductors discovered in recent years. We summary and compare their basic physical properties, including the crystal structures, electronic structures, and mechanical stability. The 2D magnetism can be described by several physical models. We also focus on the recent progresses about theoretical prediction of FM semiconductors and experimental observation of external-field regulation. Most of investigations have shown that 2D chalcogenide-based FM semiconductors have relatively high Curie temperature (T-c) and structural stability. These materials are promising to realize the room-temperature ferromagnetism in atomic-layer thickness, which is significant to design spintronics devices.
引用
收藏
页数:14
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