Laser debonding application in ultra-thin device processing

被引:2
|
作者
Wang, Saiqiang [1 ,2 ]
Yu, Yang [3 ]
Li, Song [1 ,2 ]
Feng, Ye [1 ]
Li, Jinhui [4 ]
Yang, Chunlei [1 ]
Li, Weimin [1 ]
机构
[1] Chinese Acad Sci, Ctr Photon Informat & Energy Mat, Shenzhen Inst Adv Technol, Shenzhen 518055, Peoples R China
[2] Univ Sci & Technol China, Dept Nano Sci & Technol Inst, Suzhou 215123, Peoples R China
[3] Jiangsu Dowell Photon Co LTD, Suzhou 215000, Peoples R China
[4] Chinese Acad Sci, Shenzhen Inst Adv Technol, Shenzhen Inst Adv Elect Mat, Shenzhen 518055, Peoples R China
关键词
LIFT-OFF;
D O I
10.1364/AO.490195
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Laser debonding offers several advantages such as precision, speed, minimal damage, and being noncontact. We investigated the feasibility of utilizing laser processing technology in producing high-performance ultra-thin wafer devices at a low cost. We successfully utilized the 355 nm ultraviolet nanosecond laser to develop a compatible laser debonding process for domestic temporary bonding adhesives, which effectively performed the laser lift-off of 8-in (20.3 cm) silicon/temporary bonding adhesive/glass substrate samples at a power density of 250 mJ/cm2. We designed and developed a line light source shaping system that was ultimately able to produce a line spot with a length exceeding 1 cm and an energy distribution unevenness of less than 10%.& COPY; 2023 Optica Publishing Group
引用
收藏
页码:6140 / 6146
页数:7
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