Formation of Artificial Fermi Surfaces with a Triangular Superlattice on a Conventional Two-Dimensional Electron Gas

被引:5
作者
Wang, Daisy Q. [1 ,2 ]
Krix, Zeb [1 ,2 ]
Sushkov, Oleg P. [1 ,2 ]
Farrer, Ian [3 ]
Ritchie, David A. . [3 ]
Hamilton, Alexander R. . [1 ,2 ]
Klochan, Oleh [2 ,4 ]
机构
[1] Univ New South Wales, Sch Phys, Sydney, NSW 2052, Australia
[2] Univ New South Wales, Australian Res Council Ctr Excellence Future Low E, Sydney 2052, Australia
[3] Cavendish Lab, Cambridge CB3 0HE, England
[4] Univ New South Wales, Sch Sci, Canberra, ACT 2612, Australia
基金
澳大利亚研究理事会; 英国工程与自然科学研究理事会;
关键词
artificial graphene; triangular lattice; semiconductor heterostructures; Shubnikov; de Haas oscillations; commensurability oscillations; artificial band structure; MAGNETORESISTANCE OSCILLATIONS; CORRELATED STATES;
D O I
10.1021/acs.nanolett.2c04358
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Imposing an external periodic electrostatic potential to the electrons confined in a quantum well makes it possible to tronic properties different from those in the host semiconductor. Here we report the fabrication and study of a tunable triangular artificial lattice on a GaAs/AlGaAs heterostructure where it is possible to transform from the original GaAs band structure and a circular Fermi surface to a new band structure with multiple artificial Fermi surfaces simply by altering a gate bias. For weak electrostatic modulation magnetotransport measurements reveal multiple quantum oscillations and commensurability oscillations due to the electron scattering from the artificial lattice. Increasing the strength of the modulation reveals new commensurability oscillations of the electrons from the artificial Fermi surface scattering from the triangular artificial lattice. These results show that low disorder gate-tunable lateral superlattices can be used to form artificial two-dimensional crystals with designer electronic properties.
引用
收藏
页码:1705 / 1710
页数:6
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