Quantum Dot Modification of Large Area Graphene Surfaces via Amide Bonding

被引:0
作者
Neubert, T. J. [1 ]
Roesicke, F. [2 ]
Hinrichs, K. [3 ]
Nickel, N. H. [4 ]
Rappich, J. [4 ]
机构
[1] Humboldt Univ, Dept Chem, Lab Organ Synth Funct Syst, Brook Taylor Str 2, D-12489 Berlin, Germany
[2] Bayer AG, Kaiser Wilhelm Allee 1, D-51373 Leverkusen, Germany
[3] Leibniz Inst Analyt Wissensch ISAS e V, Applicat Labs Berlin, Schwarzschildstr 8, D-12489 Berlin, Germany
[4] Helmholtz Zentrum Berlin Mat & Energie GmbH, Young Investigator Grp Nanoscale Solid Liquid Inte, Schwarzschildstr 8, D-12489 Berlin, Germany
关键词
amide bonding; graphene; IRSE; quantum dots; surface functionalization; IMMOBILIZATION; FUNCTIONALIZATION; REDUCTION; PROTEINS; GROWTH; GOLD;
D O I
10.1002/admi.202301073
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Large-area graphene grown by chemical vapor deposition is functionalized by p-aminophenyl groups via the diazonium-route. Subsequently, carboxylic acid-modified CdSXSe1-X/ZnS dots (QDs) with maximum emission wavelengths of 540 nm and 630 nm are immobilized via amidation reaction to the amino-functionalized graphene on the copper growth substrate forming stable covalent bonds in all functionalization steps. After immobilization of the QDs, the functional QD/graphene stack is available for transfer from the growth substrate onto any other substrate. In this study, the QD-modified graphene is transferred to a Si wafer with surface oxide without losing the QD modification. The successful binding of the QDs onto the functionalized graphene is characterized by their vibrational signature using Raman backscattering and infrared-spectroscopic ellipsometry and by their specific light emission as measured by photoluminescence (PL) spectroscopy. Large-area graphene on Cu is functionalized with aminophenyl groups via the diazonium-route. Subsequently, carboxylic acid-modified photoluminescent quantum dots (QDs) are immobilized by forming stable covalent amide bonds on the aminophenyl groups. This layer stack is transferred to SiO2-coated c-Si without losing the optical properties of the QDs. image
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页数:6
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