Multi-state tunnel field effect transistor based on face tunneling with gate-source overlap

被引：1

作者：

Sun, Jiale ^{[1
]}

Zhang, Yuming ^{[1
]}

Lv, Hongliang ^{[1
]}

Lyu, Zhijun ^{[2
]}

Lu, Bin ^{[3
]}

Zhu, Yi ^{[1
]}

Pan, Yuche ^{[1
]}

机构：

[1] Xidian Univ, Key Lab Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R China

[2] Inst Microelect Technol, Dept Integrated Circuit Design, Xian 710004, Peoples R China

[3] Shanxi Normal Univ, Sch Phys & Informat Engn, Taiyuan 030031, Peoples R China

来源：

SOLID-STATE ELECTRONICS | 2023年 / 201卷

基金：

中国国家自然科学基金;

关键词：

Ternary logic; Tunnel Field Effect Transistor (TFET); Band to Band Tunneling (BTBT); Surface tunneling; LOGIC; CMOS;

D O I：

10.1016/j.sse.2023.108593

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a ternary surface tunneling field effect transistor (TF-TFET) based on the tunneling mechanism is designed and fabricated. By adjusting the parameters and bias voltage of the surface tunneling and the line tunneling, the transistor introduces a stable "intermediate state" between the switching states of conventional binary TFET devices, which realizes the function of a ternary logic device. The device can realize the conversion of ternary logic and binary logic devices under certain conditions, and realize various functions. The fabrication process of the device is compatible with the traditional CMOS process and is also of great significance for realizing the development of the ternary logic operation unit.

引用

页数：6

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