Temperature and Power Supply Compensated CMOS Clock Circuit Based on Ring Oscillator

被引:3
作者
Stancu, Cristian [1 ]
Neacsu, Andrei [1 ]
Profirescu, Ovidiu [1 ]
Dobrescu, Dragos [1 ]
Dobrescu, Lidia [1 ]
机构
[1] Univ Politehn Bucuresti, Fac Elect Telecommun & Informat Technol, Dept Elect Devices Circuits & Architectures, Bucharest 060042, Romania
关键词
ring oscillator; LDO; frequency oscillation; CMOS technology; level-shifter; charge-pump;
D O I
10.3390/electronics12030507
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
Improved performance operational amplifier demand has continuously increased. IC designers use the charge pump technique as an advanced solution to implement the amplifier's rail-to-rail input stage, but the need for a large load capacitor is a serious downside. To reduce this passive component value, high-frequency clock circuits with a 50% duty cycle should be implemented. This paper focuses on designing such a circuit that is further compensated with temperature and power supply, maintaining these performances even when process variations occur, starting from a ring oscillator as the architecture core. A pre-layout 50 MHz center frequency at 25 degrees C with a 1.6 temperature percentage error was achieved. Post-layout simulations to account for parasitic effects were also performed, with a 48.9 MHz center frequency reached. Distinct methods that control the frequency variation were discussed and established. Performance comparison of the designed PLL with previously reported clock circuits in the CMOS process was concluded, with superior results such as power consumption, die area, and temperature range accomplished.
引用
收藏
页数:13
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