Temperature Dependencies of Radiative and Nonradiative Carrier Lifetimes in InGaAs Quantum Well-Dots

被引：0
作者：
Nadtochiy, A. M. [1 ,2 ]
Melnichenko, I. A. [1 ]
Ivanov, K. A. [1 ]
Mintairov, S. A. [3 ]
Kalyuzhnyy, N. A. [3 ]
Maximov, M. V. [2 ]
Kryzhanovskaya, N. V. [1 ]
Zhukov, A. E. [1 ]
机构：
[1] Natl Res Univ, Higher Sch Econ, St Petersburg 190008, Russia
[2] Alferov Univ, St Petersburg 194021, Russia
[3] Ioffe Inst, St Petersburg 194021, Russia
来源：
SEMICONDUCTORS | 2023年 / 57卷 / 11期
基金：
俄罗斯科学基金会;
关键词：
semiconductors; quantum well-dots; photoluminescence; time resolution; lifetime; temperature dependence; EXCITON LIFETIMES; RECOMBINATION; TIME;
D O I：
10.1134/S1063782623080110
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Heterostructure with InGaAs/GaAs quantum well-dots was investigated in temperature range 10-300 K using photoluminescence spectroscopy in CW mode as well with time resolution. Obtained decay times were splitted into radiative and nonradiative components of carrier lifetime. It is found that radiative lifetime demonstrates exponential growth with temperature rise, while temperature dependence of nonradiative one is much weaker.
引用
收藏
页码：488 / 491
页数：4
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