In-Plane Flexoelectricity in Two-Dimensional D3d Crystals

被引:2
作者
Springolo, Matteo [1 ]
Royo, Miquel [1 ]
Stengel, Massimiliano [1 ,2 ]
机构
[1] Inst Ciencia Mat Barcelona ICMAB CSIC, Campus UAB, Bellaterra 08193, Spain
[2] ICREA Inst Catalana Recerca Estudis Avancats, Barcelona 08010, Spain
基金
欧洲研究理事会;
关键词
PIEZOELECTRICITY; POLARIZATION; MONOLAYERS;
D O I
10.1103/PhysRevLett.131.236203
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We predict a large in-plane polarization response to bending in a broad class of trigonal two-dimensional crystals. We define and compute the relevant flexoelectric coefficients from first principles as linear-response properties of the undistorted layer by using the primitive crystal cell. The ensuing response (evaluated for SnS2, silicene, phosphorene, and RhI3 monolayers and for a hexagonal BN bilayer) is up to 1 order of magnitude larger than the out-of-plane components in the same material. We illustrate the topological implications of our findings by calculating the polarization textures that are associated with a variety of rippled and bent structures. We also determine the longitudinal electric fields induced by a flexural phonon at leading order in amplitude and momentum.
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页数:7
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