Improved Performance of MoS2 Negative-Capacitance Field-Effect Transistors by Optimizing Gate-Stack of Al-Doped HfO2/Al2O3

被引：2

作者：

Xia, Yuqin ^{[1
]}

Liu, Lu ^{[1
]}

Tao, Xinge ^{[1
]}

Tian, Yuying ^{[1
]}

Xu, Jing-Ping ^{[1
]}

机构：

[1] Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2023年 / 70卷 / 02期

基金：

中国国家自然科学基金;

关键词：

Hf1-xAlxOy; hysteresis; MoS2; negative-capacitance field-effect transistor (NCFET); subthreshold swing (SS); HYSTERESIS; FILMS;

D O I：

10.1109/TED.2022.3227519

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

this work, negative-capacitance field-effect transistors (NCFETs) based on Hf1-xAlxOy ferroelectric films are fabricated, and the effects of the Al content in Hf1-xAlxOy films and the thicknesses of the ferroelectric Hf1-xAlxOy layer/Al2O3 match layer on the electrical properties of the NCFETs are focused. The results show that as the Al content decreases and the thickness of the ferroelectric layer/the match layer increases/decreases, the remanent polarization intensity of the gate-stack of Hf1-xAlxOy /Al2O3 becomes large, and the subthreshold swing (SS) and total hysteresis of the relevant NCFETs are decreased. When the ratio of Al to Hf is about 1:19 to form Hf0.95Al0.05Oy ferroelectric film and the thicknesses of Hf0.95Al0.05Oy/Al2O3 are 10 nm/2 nm, respectively, excellent device performance is obtained with a low SS of 35.4 mV/dec, high ON/OFF current ratio of 5.0 x 10(6), and negligible hysteresis of 36.2 mV. The involved mechanisms lie in enhanced ferroelectricity of Hf1-xAlxOy films and a good matching between the ferroelectric capacitance and MOS capacitance of devices under the suitable structure and process parameters.

引用

页码：782 / 788

页数：7

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