Sintering behaviors and microwave dielectric properties of Ba3P4O13 ceramics

被引:5
作者
Wang, Chang-Hao [1 ]
Shi, Zhong-Qi [2 ]
Liu, Wen-Feng [3 ]
Darwish, Moustafa Adel [4 ]
Zhou, Tao [5 ]
Chen, Ya-Wei [6 ]
Liang, Qi-Xin [6 ]
Zhang, Mei-Rong [6 ]
Zhou, Di [1 ]
机构
[1] Xi An Jiao Tong Univ, Sch Elect Sci & Engn, Elect Mat Res Lab, Key Lab Multifunct Mat & Struct,Minist Educ, Xian 710049, Shaanxi, Peoples R China
[2] Xi An Jiao Tong Univ, State Key Lab Mech Behav Mat, Xian 710049, Peoples R China
[3] Xi An Jiao Tong Univ, State Key Lab Elect Insulat & Power Equipment, Xian 710049, Shaanxi, Peoples R China
[4] Tanta Univ, Fac Sci, Phys Dept, Al Geish St, Tanta 31527, Egypt
[5] Hangzhou Dianzi Univ, Sch Elect & Informat Engn, Hangzhou 310018, Peoples R China
[6] Shenzhen Microgate Technol Co Ltd, Shenzhen 518118, Guangdong, Peoples R China
基金
中国国家自然科学基金;
关键词
Electronic materials; Ceramics; Microstructure; X-ray diffraction; Dielectric properties; LTCC APPLICATIONS; LOW-TEMPERATURE; CONSTANTS;
D O I
10.1016/j.materresbull.2024.112704
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this study, a Ba3P4O13 ceramic was synthesized adopting a conventional solid-state ceramic method. Optimal microwave dielectric properties were obtained in ceramic samples sintered at 840 degrees C for 4 h with a epsilon(r) (permittivity) = 7.9, a Q x f (Q = 1/dielectric loss, f = resonant frequency) = 14,200 GHz (at 11.18 GHz), and a tau(f) (TCF, temperature coefficient of resonant frequency) = + 48 ppm/degrees C. tau(f) value shifted from + 45 ppm/degrees C to - 31.5 ppm/degrees C with sintering temperature rising from 860 degrees C to 900 degrees C, and this decrease in tau(f) value was mainly caused by the decomposition of Ba3P4O13 into BaP2O6 and Ba2P2O7. Furthermore, a ceramic sample sintered at 890 degrees C achieved a near zero tau(f) (- 1.3 ppm/degrees C), together with a epsilon(r) = 7.7 and a Q x f = 13,000 GHz (at 11.44 GHz). Ba3P4O13 ceramic has demonstrated potential as a material suitable for low-temperature co-fired ceramic technology (LTCC).
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页数:5
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