Effect of pre-adsorbed moisture and humidity on I-V characteristics of Si PIN diode

被引:5
作者
Karrevula, Venkateswara Reddy [1 ]
Prasad, Arun K. [1 ]
Mishra, Vijay [2 ]
Tripurasundari, S. [1 ]
机构
[1] Indira Gandhi Ctr Atom Res, Surface & Nanosci Div, Mat Sci Grp, Kalpakkam 603102, Tamil Nadu, India
[2] EvryVed Pvt Ltd, Bangalore 560015, Karnataka, India
关键词
Si PIN diode; Pre-adsorbed moisture; I-V measurements; Relative humidity; Contact angle; Systematic study; RELATIVE-HUMIDITY; CONDUCTIVITY; WATER; FABRICATION; ADSORPTION; SENSORS;
D O I
10.1016/j.nima.2022.167832
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Several protocols are followed in the manufacture, storage, and use of electronic devices to minimize the effects of harsh environmental conditions such as high relative humidity (RH) and high temperature. A systematic study is presented in this report on the current-voltage (I-V) characteristics of commercial silicon (Si) PIN diodes to elucidate their response in ambient and controlled humidity conditions for ambient stored (pre-heated) and diodes heat-treated at 100 degrees C (post-heated). Upon successive measurements in ambient conditions, the reverse current (IR) in the pre-heated diode increased from the nA to mu A range and showed no reproducibility. An increase in IR is also accompanied by a decrease in surface breakdown voltage (VSB) with an increase in RH. The IR vs RH response showed a power-law dependence with a crossover from a sub-linear to super-linear behavior at a critical RH (RHC), pointing to two distinct adsorption modes. The RHC increased from 42% for the pre-heated diode to 72% for the post-heated diode highlighting the role of pre-adsorbed moisture accumulated on the ambient stored diode. The effect of pre-adsorbed moisture is also corroborated by contact angle measurements.
引用
收藏
页数:10
相关论文
共 37 条
[1]   NUCLEAR SPECTROSCOPY WITH SI PIN DIODE DETECTORS AT ROOM-TEMPERATURE [J].
AHMAD, I ;
BETTS, RR ;
HAPP, T ;
HENDERSON, DJ ;
WOLFS, FLH ;
WUOSMAA, AH .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1990, 299 (1-3) :201-204
[2]   Dielectric behavior and ac conductivity study of NiO/Al2O3 nanocomposites in humid atmosphere [J].
Ahmad, Mohamad M. ;
Makhlouf, Salah A. ;
Khalil, Kamal M. S. .
JOURNAL OF APPLIED PHYSICS, 2006, 100 (09)
[3]   Influence of Molding Compound on Leakage Current in MOS Transistors [J].
Alam, Mohammed Aftab ;
Das, Diganta ;
Azarian, Michael H. ;
Sood, Bhanu ;
Pecht, Michael G. .
IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY, 2011, 1 (07) :1054-1063
[4]   ELECTRICAL CONDUCTIVITY OF SILICA GEL IN PRESENCE OF ADSORBED WATER [J].
ANDERSON, JH ;
PARKS, GA .
JOURNAL OF PHYSICAL CHEMISTRY, 1968, 72 (10) :3662-&
[5]  
[Anonymous], 2022, CIPS 2022 12 INT C I
[6]   Evolution of the adsorbed water layer structure on silicon oxide at room temperature [J].
Asay, DB ;
Kim, SH .
JOURNAL OF PHYSICAL CHEMISTRY B, 2005, 109 (35) :16760-16763
[7]  
Atalla M., 1959, Proceedings of the IEE-Part B: Electronic and Communication Engineering, V106, P1130, DOI DOI 10.1049/PI-B-2.1959.0204
[8]   Fabrication and characterization of SiO2 microcantilevers by direct laser writing and wet chemical etching methods for relative humidity sensing [J].
Balasubramanian, S. ;
Prabakar, K. .
MICROELECTRONIC ENGINEERING, 2019, 212 :61-69
[9]  
Baylakoglu, 2021, E PRIME ADV ELECT EN, V1
[10]   Ultrahigh humidity sensitivity of graphene oxide [J].
Bi, Hengchang ;
Yin, Kuibo ;
Xie, Xiao ;
Ji, Jing ;
Wan, Shu ;
Sun, Litao ;
Terrones, Mauricio ;
Dresselhaus, Mildred S. .
SCIENTIFIC REPORTS, 2013, 3