A novel 4H-SiC multiple stepped SGT MOSFET with improved high frequency figure of merit

被引：3

作者：

Zhang, Jingping ^{[1
]}

Luo, Houcai ^{[1
]}

Wu, Huan ^{[1
]}

Wang, Zeping ^{[1
]}

Zheng, Bofeng ^{[1
]}

Zhang, Guoqi ^{[2
]}

Chen, Xianping ^{[1
,3
]}

机构：

[1] Chongqing Univ, Key Lab Optoelect Technol & Syst, Chongqing, Peoples R China

[2] Delft Univ Technol, Delft Inst Microsyst & Nanoelect, NL-2628 CD Delft, Netherlands

[3] Chongqing Univ, Key Lab Power Transmiss Equipment & Syst Secur & N, Chongqing, Peoples R China

来源：

PHYSICA SCRIPTA | 2023年 / 98卷 / 12期

基金：

中国国家自然科学基金;

关键词：

4H-SiC MOSFET; SG; Cgd; Qgd; HF-FOM; switching loss; TRENCH MOSFET; FAILURE-MECHANISM; GATE MOSFETS; MODEL; CGT/SGT; DESIGN;

D O I：

10.1088/1402-4896/ad049b

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A novel 4H-SiC Multiple Stepped SGT MOSFET (MSGT-MOSFET) is presented and investigated utilizing TCAD simulations in this paper. We have quantitatively studied the characteristics of the device through simulation modeling and physical model calculations, and comparatively analyzed the performance and application prospects of this novel device. The gate-to-drain capacitance (Cgd) and gate-to-drain charge (Qgd) of the MSGT-MOSFET are significantly reduced in comparison with the double trench MOSFET (DT-MOSFET) and the conventional SGT MOSFET (CSGT-MOSFET), due to the reduction of the overlapping area of the split gate (SG) structure and drift region. Therefore, the obtained high frequency figure of merit (HF-FOM) defined as [Ron x Cgd] reduced by 23.9% compared with DT-MOSFET and CSGT-MOSFET. And the HF-FOM [Ron x Qgd] for the MSGT-MOSFET significantly decreased by 71% and 50%, respectively, compared to that of the DT-MOSFET and CSGT-MOSFET. Furthermore, the switching loss is also simulated and calculated. And the total switching loss of the proposed MSGT-MOSFET realizes 42.9% and 21.7% reduction in comparison with the DT-MOSFET and CSGT-MOSFET. The overall enhanced performances suggest that the MSGT-MOSFET is an excellent choice for high frequency power electronic applications.

引用

页数：10

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