Enhancement-Mode GaN Transistor Technology for Harsh Environment Operation

被引：21

作者：

Yuan, Mengyang ^{[1
,2
]}

Niroula, John ^{[1
]}

Xie, Qingyun ^{[1
]}

Rajput, Nitul S. ^{[3
]}

Fu, Kai ^{[4
,5
]}

Luo, Shisong ^{[6
]}

Das, Sagar Kumar ^{[7
]}

Bin Iqbal, Abdullah Jubair ^{[7
]}

Sikder, Bejoy ^{[7
]}

Isamotu, Mohamed Fadil ^{[8
]}

Oh, Minsik ^{[1
]}

Eisner, Savannah R. ^{[9
]}

Senesky, Debbie G. ^{[9
]}

Hunter, Gary W. ^{[10
]}

Chowdhury, Nadim ^{[7
]}

Zhao, Yuji ^{[6
]}

Palacios, Tomas ^{[1
]}

机构：

[1] MIT, Microsyst Technol Labs, Cambridge, MA 02139 USA

[2] Apple Inc, Cupertino, CA 95014 USA

[3] Technol Innovat Inst, Adv Mat Res Ctr, Abu Dhabi, U Arab Emirates

[4] Rice Univ, Dept Elect & Comp Engn, Houston, TX 77005 USA

[5] Univ Utah, Dept Elect & Comp Engn, Salt Lake City, UT 84112 USA

[6] Rice Univ, Dept Elect & Comp Engn, Houston, TX 77005 USA

[7] Bangladesh Univ Engn & Technol, Dept Elect & Elect Engn, Dhaka 1205, Bangladesh

[8] Johns Hopkins Univ, Dept Comp Sci, Baltimore, MD 21218 USA

[9] Stanford Univ, Dept Aeronaut & Astronaut, Stanford, CA 94305 USA

[10] NASA Glenn Res Ctr, Smart Sensing & Elect Syst Branch, Cleveland, OH 44135 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2023年 / 44卷 / 07期

基金：

美国国家航空航天局;

关键词：

GaN; transistor; enhancement-mode; mixed-signal; harsh environment; Venus; high temperature; high pressure; corrosive gas; degradation; microscopy; HEMTS;

D O I：

10.1109/LED.2023.3279813

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter reports an enhancement-mode (E-mode) GaN transistor technology which has been demonstrated to operate in a simulated Venus environment (460 degrees C, similar to 92 atm., containing CO2/N-2/SO2 etc.) for 10 days. The robustness of the W/p-GaN-gate AlGaN/GaN high electron mobility transistor (HEMT) was evaluated by two complementary approaches, (1) in-situ electrical characterization, which revealed proper transistor operation (including E-mode VTH with <0.09 V variation) in extreme environments; and (2) advanced microscopy investigation of the device after test, which highlighted the effect of the stress conditions on the epitaxial and device structures. To the best of the authors' knowledge, this is the first demonstration and comprehensive analysis of E-mode GaN transistors in such harsh environments, therefore establishing the proposed GaN technology as a strong contender for harsh environment mixed-signal electronics.

引用

页码：1068 / 1071

页数：4

共 33 条

[1] Sensitivity of 2DEG-based Hall-effect sensors at high temperatures [J].

Alpert, H. S. ;

Chapin, C. A. ;

Dowling, K. M. ;

Benbrook, S. R. ;

Koeck, H. ;

Ausserlechner, U. ;

Senesky, D. G. .

REVIEW OF SCIENTIFIC INSTRUMENTS, 2020, 91 (02)

[2] Regrowth-Free GaN-Based Complementary Logic on a Si Substrate [J].

Chowdhury, Nadim ;

Xie, Qingyun ;

Yuan, Mengyang ;

Cheng, Kai ;

Then, Han Wui ;

Palacios, Tomas .

IEEE ELECTRON DEVICE LETTERS, 2020, 41 (06) :820-823

[3] Power cycling and temperature endurance test of a GaN switching cell with substrate integrated chips [J].

Dechant, E. ;

Seliger, N. ;

Kennel, R. .

MICROELECTRONICS RELIABILITY, 2019, 100

[4] High temperature induced failure in Ti/Al/Ni/Au Ohmic contacts on AlGaN/GaN heterostructure [J].

Dong, Zhihua ;

Wang, Jinyan ;

Wen, C. P. ;

Liu, Shenghou ;

Gong, Rumin ;

Yu, Min ;

Hao, Yilong ;

Xu, Fujun ;

Shen, Bo ;

Wang, Yangyuan .

MICROELECTRONICS RELIABILITY, 2012, 52 (02) :434-438

[5] Extended Exposure of Gallium Nitride Heterostructure Devices to a Simulated Venus Environment [J].

Eisner, Savannah R. ;

Alpert, Hannah S. ;

Chapin, Caitlin A. ;

Yalamarthy, Ananth Saran ;

Satterthwaite, Peter F. ;

Nasiri, Ardalan ;

Port, Sara ;

Ang, Simon ;

Senesky, Debbie G. .

2021 IEEE AEROSPACE CONFERENCE (AEROCONF 2021), 2021,

[6] Threshold Switching and Memory Behaviors of Epitaxially Regrown GaN-on-GaN Vertical p-n Diodes With High Temperature Stability [J].

Fu, Kai ;

Fu, Houqiang ;

Huang, Xuanqi ;

Yang, Tsung-Han ;

Chen, Hong ;

Baranowski, Izak ;

Montes, Jossue ;

Yang, Chen ;

Zhou, Jingan ;

Zhao, Yuji .

IEEE ELECTRON DEVICE LETTERS, 2019, 40 (03) :375-378

[7] Stable Operation of AlGaN/GaN HEMTs for 25 h at 400C in air [J].

Kargarrazi, Saleh ;

Yalamarthy, Ananth Saran ;

Satterthwaite, Peter F. ;

Blankenberg, Scott William ;

Chapin, Caitlin ;

Senesky, Debbie G. .

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2019, 7 (01) :931-935

[8]

Kremic T, 2014, 2014 IEEE AEROSPACE CONFERENCE

[9] Thermally hardened AlGaN/GaN MIS-HEMTs based on multilayer dielectrics and silicon nitride passivation [J].

Lee, Hanwool ;

Ryu, Hojoon ;

Zhu, Wenjuan .

APPLIED PHYSICS LETTERS, 2023, 122 (11)

[10] A 4-Transistor Monolithic Solution to Highly Linear On-Chip Temperature Sensing in GaN Power Integrated Circuits [J].

Li, Ang ;

Shen, Yi ;

Li, Ziqian ;

Li, Fan ;

Sun, Ruize ;

Mitrovic, Ivona Z. ;

Wen, Huiqing ;

Lam, Sang ;

Liu, Wen .

IEEE ELECTRON DEVICE LETTERS, 2023, 44 (02) :333-336

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