Electrical property improvement for boron-doped diamond metal-oxide-semiconductor field-effect transistors

被引：6

作者：

Liu, J. W. ^{[1
]}

Teraji, T. ^{[1
]}

Da, B. ^{[2
]}

Koide, Y. ^{[1
]}

机构：

[1] Natl Inst Mat Sci NIMS, Res Ctr Elect & Opt Mat, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan

[2] NIMS, Res & Serv Div Mat Data & Integrated Syst, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan

来源：

APPLIED PHYSICS LETTERS | 2024年 / 124卷 / 07期

基金：

日本学术振兴会;

关键词：

Diamonds - Dielectric devices - Drain current - Electric breakdown - Metallic compounds - MOS devices - Oxide semiconductors;

D O I：

10.1063/5.0194424

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-performance boron-doped diamond (B-diamond) metal-oxide-semiconductor field-effect transistors (MOSFETs) are fabricated by improving fabrication process and device structures. Drain current maximum values for the B-diamond MOSFETs operating at room temperature and 300 C-degrees are -1.2 and -10.9 mA/mm, respectively. Both exhibit on/off ratios higher than 10(9) and their extrinsic transconductance maximum values are 29.0 and 215.7 mu S/mm, respectively. These properties surpass the values reported in previous studies.

引用

页数：5

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