An improved Hénon map based on G-L fractional-order discrete memristor and its FPGA implementation

被引:10
|
作者
Wang, Huihai [1 ]
Li, Guang [1 ]
Sun, Kehui [2 ]
He, Shaobo [3 ]
机构
[1] Cent South Univ, Sch Elect Informat, Changsha 410083, Peoples R China
[2] Cent South Univ, Sch Phys, Changsha 410083, Peoples R China
[3] Xiangtan Univ, Sch Automat & Elect Informat, Xiangtan 411105, Peoples R China
来源
EUROPEAN PHYSICAL JOURNAL PLUS | 2024年 / 139卷 / 02期
基金
中国国家自然科学基金;
关键词
SYSTEM; CHAOS; FRACMEMRISTOR; DIFFERENCE;
D O I
10.1140/epjp/s13360-024-04924-7
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
In recent years, the application of memristors in the field of chaos has become a research hotspot. Researchers have employed integer-order discrete memristors into Henon maps, and analyzed its characteristics. In this paper, a fractional-order discrete memristor (FDM) based on Grunwald-Letnikov definition is introduced, and it is proved that it meets the definition of generalized memristor. The FDM is applied to Henon map and an improved Henon map is designed. Its dynamics is analyzed by attractors, bifurcation diagrams, maximum Lyapunov exponent spectrum and permutation entropy complexity. The results show that the improved map has a wider chaos range than the original Henon map and integer-order discrete memristive Henon map, and the order affects the state of the system and is one of the bifurcation parameters. Finally, we implement the improved Henon map on FPGA platform.
引用
收藏
页数:14
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