Nanoscale domain engineering in SrRuO3 thin films

被引:3
作者
Lichtensteiger, Celine [1 ]
Su, Chia-Ping [2 ]
Gaponenko, Iaroslav [1 ]
Hadjimichael, Marios [1 ]
Tovaglieri, Ludovica [1 ]
Paruch, Patrycja [1 ]
Gloter, Alexandre [2 ]
Triscone, Jean-Marc [1 ]
机构
[1] Univ Geneva, Dept Quantum Matter Phys, 24 Quai Ernest Ansermet, CH-1211 Geneva 4, Switzerland
[2] Univ Paris Saclay, CNRS, Lab Phys Solides, F-91405 Orsay, France
基金
瑞士国家科学基金会;
关键词
TEMPERATURE; STRAIN; FIELD; FERROELECTRICITY; POLARIZATION; SUBSTRATE; EVOLUTION; MISCUT; OXIDES;
D O I
10.1063/5.0167553
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We investigate nanoscale domain engineering via epitaxial coupling in a set of SrRuO3/PbTiO3/SrRuO3 heterostructures epitaxially grown on (110)(o)-oriented DyScO3 substrates. The SrRuO3 layer thickness is kept at 55 unit cells, whereas the PbTiO3 layer is grown to thicknesses of 23, 45, and 90 unit cells. Through a combination of atomic force microscopy, x-ray diffraction, and high resolution scanning transmission electron microscopy studies, we find that above a certain critical thickness of the ferroelectric layer, the large structural distortions associated with the ferroelastic domains propagate through the top SrRuO3 layer, locally modifying the orientation of the orthorhombic SrRuO3 and creating a modulated structure that extends beyond the ferroelectric layer boundaries. (c) 2023 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
引用
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页数:9
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