Magnetoresitance vs. electronic structure in Cu doped single crystalline Bi2Se3 3D topological insulator

被引：0

作者：

Chrobak, Maciej ^{[1
,2
]}

Mackosz, Krzysztof ^{[1
,2
,3
]}

Nowak, Kamil ^{[1
,2
]}

Naumov, Andrii ^{[2
]}

Przybylski, Marek ^{[1
,2
]}

机构：

[1] AGH Univ Krakow, Fac Phys & Appl Comp Sci, Mickiewicza Ave 30, PL-30059 Krakow, Poland

[2] AGH Univ Krakow, Acad Ctr Mat & Nanotechnol, Mickiewicza Ave 30, PL-30059 Krakow, Poland

[3] Empa, Swiss Fed Labs Mat Sci & Technol, Lab Mech Mat & Nanostruct, Feuerwerkerstr 39, CH-3602 Thun, Switzerland

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2024年 / 589卷

关键词：

Topological insulators; Surface states; Schubnikov de-Haas oscillations; STM; STS; ARPES; SURFACE-STATES; BI2TE3;

D O I：

10.1016/j.jmmm.2023.171548

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Bismuth selenide (Bi2Se3) is one of the 3D topological insulators (TI) that can be characterised as materials of a semiconducting volume and a conductive surface. The evolution of the electronic structure of (Bi1-xCux)2Se3 (x = 0, 0.025, 0.05, 0.09 and 0.125) was investigated by angle-resolved photoemission spectroscopy (ARPES), scanning tunnelling microscopy (STM/STS) and Shubnikov-de Haas oscillations (SdH). The results show that doping with Cu does not change the electronic structure, in particular it does not destroy the nontrivial topology of the system. The lack of superconductivity is discussed in view of intercalated CuxBi2Se3 in which superconductivity is observed.

引用

页数：6

共 29 条

[1] STM Imaging of Electronic Waves on the Surface of Bi2Te3: Topologically Protected Surface States and Hexagonal Warping Effects [J].

Alpichshev, Zhanybek ;

Analytis, J. G. ;

Chu, J. -H. ;

Fisher, I. R. ;

Chen, Y. L. ;

Shen, Z. X. ;

Fang, A. ;

Kapitulnik, A. .

PHYSICAL REVIEW LETTERS, 2010, 104 (01)

[2] Two-dimensional surface state in the quantum limit of a topological insulator [J].

Analytis, James G. ;

McDonald, Ross D. ;

Riggs, Scott C. ;

Chu, Jiun-Haw ;

Boebinger, G. S. ;

Fisher, Ian R. .

NATURE PHYSICS, 2010, 6 (12) :960-964

[3] Topological Insulator Materials [J].

Ando, Yoichi .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 2013, 82 (10)

[4] TUNNELLING FROM A MANY-PARTICLE POINT OF VIEW [J].

BARDEEN, J .

PHYSICAL REVIEW LETTERS, 1961, 6 (02) :57-&

[5] Structural and electronic properties of highly doped topological insulator Bi2Se3 crystals [J].

Cao, Helin ;

Xu, Suyang ;

Miotkowski, Ireneusz ;

Tian, Jifa ;

Pandey, Deepak ;

Hasan, M. Zahid ;

Chen, Yong P. .

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2013, 7 (1-2) :133-135

[6] Experimental Realization of a Three-Dimensional Topological Insulator, Bi2Te3 [J].

Chen, Y. L. ;

Analytis, J. G. ;

Chu, J. -H. ;

Liu, Z. K. ;

Mo, S. -K. ;

Qi, X. L. ;

Zhang, H. J. ;

Lu, D. H. ;

Dai, X. ;

Fang, Z. ;

Zhang, S. C. ;

Fisher, I. R. ;

Hussain, Z. ;

Shen, Z. -X. .

SCIENCE, 2009, 325 (5937) :178-181

[7] Fe dopants and surface adatoms versus nontrivial topology of single-crystallineBi2Se3 [J].

Chrobak, M. ;

Mackosz, K. ;

Jurczyszyn, M. ;

Dobrzanski, M. ;

Nowak, K. ;

slezak, T. ;

Zajac, M. ;

Sikora, M. ;

Rams, M. ;

Eelbo, T. ;

Stepien, J. ;

Wasniowska, M. ;

Mathon, O. ;

Yakhou-Harris, F. ;

Merkel, D. G. ;

Miotkowski, I ;

Kakol, Z. ;

Kozlowski, A. ;

Przybylski, M. ;

Tarnawski, Z. .

NEW JOURNAL OF PHYSICS, 2020, 22 (06)

[8] Toward the Intrinsic Limit of the Topological Insulator Bi2Se3 [J].

Dai, Jixia ;

West, Damien ;

Wang, Xueyun ;

Wang, Yazhong ;

Kwok, Daniel ;

Cheong, S. -W. ;

Zhang, S. B. ;

Wu, Weida .

PHYSICAL REVIEW LETTERS, 2016, 117 (10)

[9] Majorana zero modes and topological quantum computation [J].

Das Sarma, Sankar ;

Freedman, Michael ;

Nayak, Chetan .

NPJ QUANTUM INFORMATION, 2015, 1

[10] TUNNELING SPECTROSCOPY OF THE (110)-SURFACE OF DIRECT-GAP III-V SEMICONDUCTORS [J].

FEENSTRA, RM .

PHYSICAL REVIEW B, 1994, 50 (07) :4561-4570

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