Optical Properties of MoSe2 Monolayer Implanted with Ultra-Low-Energy Cr Ions

被引：6

作者：

Bui, Minh N. N. ^{[4
,6
]}

Rost, Stefan ^{[1
,2
,3
,4
]}

Auge, Manuel ^{[5
]}

Zhou, Lanqing ^{[4
,6
]}

Friedrich, Christoph ^{[5
]}

Bluegel, Stefan ^{[4
,5
]}

Kretschmer, Silvan ^{[7
]}

Krasheninnikov, Arkady V. V. ^{[7
,8
]}

Watanabe, Kenji ^{[9
]}

Taniguchi, Takashi ^{[10
]}

Hofsaess, Hans C. C. ^{[5
]}

Gruetzmacher, Detlev ^{[6
]}

Kardynal, Beata E. E. ^{[4
,6
]}

机构：

[1] Forschungszentrum Julich, Peter Grunberg Inst PGI 1 1, D-52425 Julich, Germany

[2] Forschungszentrum Julich, Inst Adv Simulat IAS 1 1, D-52425 Julich, Germany

[3] JARA, D-52425 Julich, Germany

[4] Rhein Westfal TH Aachen, Dept Phys, D-52074 Aachen, Germany

[5] Univ Goottingen, Inst Phys 2, D-37077 Gottingen, Germany

[6] Forschungszentrum Julich, Peter Grunberg Inst PGI 9 9, D-52425 Julich, Germany

[7] Helmholtz Zentrum Dresden Rossendorf, Inst Ion Beam Phys & Mat Res, D-01328 Dresden, Germany

[8] Aalto Univ Sch Sci, Dept Appl Phys, Aalto 00076, Finland

[9] Natl Inst Mat Sci, Res Ctr Funct Mat, Tsukuba 3050044, Japan

[10] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton, 1-1 Namiki, Tsukuba 3050044, Japan

来源：

ACS APPLIED MATERIALS & INTERFACES | 2023年 / 15卷 / 29期

基金：

日本学术振兴会;

关键词：

transition-metaldichalcogenide monolayer; ultra-low-energyion implantation; MoSe2; van der Waalsheterostructure; photoluminescence; molecular dynamics; density functional theory; DIELECTRIC-CONSTANT; PHOTOLUMINESCENCE; IRRADIATION; GRAPHENE; EMITTERS;

D O I：

10.1021/acsami.3c05366

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

This paper exploresthe optical properties of an exfoliatedMoSe(2) monolayer implanted with Cr+ ions, acceleratedto 25 eV. Photoluminescence of the implanted MoSe2 revealsan emission line from Cr-related defects that is present only underweak electron doping. Unlike band-to-band transition, the Cr-introducedemission is characterized by nonzero activation energy, long lifetimes,and weak response to the magnetic field. To rationalize the experimentalresults and get insights into the atomic structure of the defects,we modeled the Cr-ion irradiation process using ab initio moleculardynamics simulations followed by the electronic structure calculationsof the system with defects. The experimental and theoretical resultssuggest that the recombination of electrons on the acceptors, whichcould be introduced by the Cr implantation-induced defects, with thevalence band holes is the most likely origin of the low-energy emission.Our results demonstrate the potential of low-energy ion implantationas a tool to tailor the properties of two-dimensional (2D) materialsby doping.

引用

页码：35321 / 35331

页数：11

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