Optimizing the Efficiency of Lead-Free Cs2TiI6-Based Double Halide Perovskite Solar Cells Using SCAPS-1D

被引:24
作者
Rehman, Ubaid ur [1 ]
Almousa, Nouf [2 ]
ul Sahar, Kashaf [3 ]
Ashfaq, Arslan [4 ]
Mahmood, Khalid [4 ]
Shokralla, Elsammani Ali [5 ]
Al-Buriahi, Mohammed S. S. [6 ]
Alrowaili, Ziyad A. A. [7 ]
Capangpangan, Rey Y. Y. [8 ]
Alguno, Arnold C. C. [9 ]
机构
[1] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland
[2] Princess Nourah bint Abdulrahman Univ, Coll Sci, Dept Phys, Riyadh 11671, Saudi Arabia
[3] Islamia Univ Bahawalpur, Inst Chem, Inorgan Mat Lab 52S, Bahawalpur 63100, Pakistan
[4] Govt Coll Univ Faisalabad, Dept Phys, Faisalabad 38000, Pakistan
[5] Al Baha Univ, Fac Sci, Dept Phys, Alaqiq 657797738, Saudi Arabia
[6] Sakarya Univ, Dept Phys, TR-54050 Sakarya, Turkiye
[7] Jouf Univ, Coll Sci, Dept Phys, Sakaka, Saudi Arabia
[8] Mindanao State Univ Naawan, Coll Marine & Allied Sci, Dept Phys Sci & Math, Misamis Oriental 9023, Philippines
[9] Mindanao State Univ, Premier Res Inst Sci & Math PRISM, Iligan Inst Technol, Dept Phys, Iligan 9200, Philippines
关键词
Cs2TiI6; PCE; PSCs; SCAPS-1D; PERFORMANCE EVALUATION; SIMULATION; FILM; OPTIMIZATION; TOXICITY; LAYERS; ETL; BR; CL;
D O I
10.1002/ente.202300459
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Conventional lead halides perovskites have attracted much attention to become a next-generation solar technology. Besides their low cost and excellent efficiency, high toxic nature and device instability become the major issue to limit their wide applications. Ti-based (Cs2TiI6) double halide perovskite solar cells (PSCs) have emerged as a potential candidate to become the best alternate. However, poor device efficiency is still a restriction. Therefore, proper optimization and deep device analysis are needed to explore the full potential of Cs2TiI6-based PSCs. In the present research work, the open-circuit voltage (V-oc), current density (J(sc)), fill factor (FF), and power conversion efficiency of Cs2TiI6-based PSC are successfully optimized. The device optimization is performed using the different combinations of electron transport layers and hole transport layers along with absorber thickness, acceptor doping density, and interface defect density. The effect of R-series and R-shunt is explored and identified the best device efficiency of 28.07% along with other photovoltaic (PV) parameters; V-oc = 1.41 V, J(sc) = 22.44 mA cm(-2), and FF = 88.15%, respectively. The supportive analysis of C-V and Mott-Schottky characteristics helps to get deep insight into the device's performance. Furthermore, the resultant PV parameters are compared to the previous studies as well.
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页数:11
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