Improved performance of perovskite light-emitting diodes via bifacial modification

被引：3

作者：

Chen, Dan ^{[1
]}

Li, Haihua ^{[1
]}

Zeng, Muxue ^{[1
]}

Zhang, Ganshuai ^{[1
]}

Wang, Junjie ^{[1
]}

Li, Danyang ^{[1
]}

Zhong, Rui ^{[1
]}

Wang, Jian ^{[1
]}

Peng, Junbiao ^{[1
]}

机构：

[1] South China Univ Technol, Inst Polymer Optoelect Mat & Devices, State Key Lab Luminescent Mat & Devices, Guangzhou 510640, Peoples R China

来源：

ORGANIC ELECTRONICS | 2023年 / 120卷

关键词：

Perovskite light -emitting diodes; Bifacial modification; Passivation; Surface defects; SOLAR-CELL PERFORMANCE; PHOTOELECTRON-SPECTROSCOPY; PEDOTPSS; FILMS; MODULATION; LAYER; PH;

D O I：

10.1016/j.orgel.2023.106842

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A bifacial modification technique has been developed to improve the device performance of the perovskite lightemitting diodes (PeLEDs). For the bottom modification, to reduce the acidity of the hole injection layer (HIL) poly(3,4-ethyl-enedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS), environmental-friendly L- (+)-Arginine (Arg) is added to alleviate the erosion of indium in ITO electrode. As the result, the peak current efficiency (CE) is enhanced from 6.1 to 16.3 cd A-1, and the maximum external quantum efficiency (EQE) goes from 1.7% to 4.4%. For the top modification, (3-Aminopropyl)triethoxysilane (APTES) is introduced to passivate the surface defects of the perovskite film by coordinating with Pb2+ and suppressing the creation of metallic Pb atoms. With additional APTES on top, the peak CE reaches 31.8 cd A-1, and the maximum EQE reaches 7.7%.

引用

页数：5

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