Elucidating the Conducting Mechanisms in a Flexible Piezoresistive Pressure Sensor Using Reduced Graphene Oxide Film in Silicone Elastomer

被引:5
作者
Gilanizadehdizaj, Golezar [1 ]
Bhattacharyya, Debes [1 ]
Stringer, Jonathan [1 ]
Aw, Kean [1 ]
机构
[1] Univ Auckland, Dept Mech & Mechatron Engn, Auckland 1010, New Zealand
关键词
flexible piezoresistive sensor; Schottky emission; thermionic emission; Ohmic conduction; SKIN;
D O I
10.3390/s23052443
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
Sensors as a composite film made from reduced graphene oxide (rGO) structures filled with a silicone elastomer are soft and flexible, making them suitable for wearable applications. The sensors exhibit three distinct conducting regions, denoting different conducting mechanisms when pressure is applied. This article aims to elucidate the conduction mechanisms in these sensors made from this composite film. It was deduced that the conducting mechanisms are dominated by Schottky/thermionic emission and Ohmic conduction.
引用
收藏
页数:13
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