Ultralow Dark Current Room-Temperature Infrared Photodetector Based on InSb Nanosheets/MoS2 Van der Waals Heterostructure

被引：6

作者：

Shi, Qian ^{[1
,2
,3
]}

Zhang, Shukui ^{[1
,2
]}

Wang, Xudong ^{[2
]}

Chen, Yan ^{[2
,4
]}

Zhou, Yong ^{[2
]}

Lin, Tie ^{[2
]}

Shen, Hong ^{[2
]}

Ge, Jun ^{[2
]}

Meng, Xiangjian ^{[2
]}

Pan, Dong ^{[5
]}

Zhao, Jianhua ^{[5
]}

Hu, Weida ^{[1
,2
]}

Dai, Ning ^{[1
,2
]}

Chu, Junhao ^{[2
,4
,6
]}

Wang, Jianlu ^{[1
,2
,4
,6
]}

机构：

[1] Univ Chinese Acad Sci, Hangzhou Inst Adv Study, Hangzhou 310024, Zhejiang, Peoples R China

[2] Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Lab Infrared Phys, 500 Yu Tian Rd, Shanghai 200083, Peoples R China

[3] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China

[4] Fudan Univ, Inst Optoelect, Shanghai Frontier Base Intelligent Optoelect & Per, Shanghai 200433, Peoples R China

[5] Chinese Acad Sci, Inst Semicond, State Key Lab Superlatt & Microstruct, POB 912, Beijing 100083, Peoples R China

[6] Fudan Univ, Frontier Inst Chip & Syst, Shanghai 200433, Peoples R China

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2023年 / 220卷 / 15期

基金：

中国博士后科学基金; 上海市自然科学基金;

关键词：

hot operating temperatures; InSb nanosheets; photodetectors; TRANSPORT; FILMS;

D O I：

10.1002/pssa.202300245

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

As a narrow-bandgap semiconductor, InSb is widely used in infrared (IR) detection due to its excellent performance and other characteristics such as ultrahigh electron mobility, extremely high quantum efficiency, and robust chemical properties. Herein, an ultralow dark current room-temperature IR photodetector based on InSb nanosheets (NSs)/MoS2 flakes van der Waals (vdW) heterostructure is presented. Benefiting from a large surface-to-volume ratio and phonon scattering suppressed on the nanostructure, InSb NSs devices have high photosensitivity and low dark current density (16.67 A cm(-2)). To further suppress the dark current, a vdW heterojunction composed of InSb NSs and MoS2 is fabricated. When the InSb NSs/MoS2 vdW heterostructures' photodetector work on a photovoltaic model (zero-bias operation), the device shows a dark current density as low as 0.12 A cm(-2) at room temperature, exhibiting a high external quantum efficiency (EQE) of 3.6 x 10(2)%, the responsivity of 3.8 A W-1, and detectivity of 1.2 x 10(9) cm Hz(1/2) W-1 under 1310 nm laser illumination. These results demonstrate that InSb NSs vdW heterostructure is a feasible scheme to realize InSb room-temperature IR detection.

引用

页数：6

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