A low dielectric constant material synergized by calix[4]arene and benzocyclobutene units

被引:5
|
作者
Zhou, Chengcheng [1 ]
Shen, Ding [1 ]
Chai, Xingpeng [1 ]
Shi, Boyang [1 ]
Zhu, Wenya [1 ]
Wang, Guowei [1 ]
机构
[1] Fudan Univ, Dept Macromol Sci, State Key Lab Mol Engn Polymers, Shanghai 200433, Peoples R China
基金
中国国家自然科学基金;
关键词
TRIFLUOROMETHYL GROUPS; FLUOROPOLYMER FILMS; HIGH-FREQUENCY; POLYMERS; COPOLYMERS; STRATEGY; ETHER);
D O I
10.1039/d3tc01554h
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The rapid development of the semiconductor industry puts forward higher requirements on the properties of insulating dielectrics. As a supramolecular compound, calix[4]arene has a unique cavity structure, showing potential for a low-k material. We herein reported a novel strategy to functionalize the 4-tert-butylcalix[4]arene with different numbers of benzocyclobutene (BCB) units (2 or 4) and spacers (-(CH2)(3)- or -(CH2)(6)-) by sequential substitution and hydrosilylation reactions. These precursors can be cured under heating to form a crosslinked film. The optimized curation condition was screened by differential scanning calorimetry (DSC) measurement. Combining with a comparison experiment using a precursor with calix[4]arene but without BCB units, the wide-angle X-ray scattering (WAXS) pattern and thermal analysis provided solid evidence that the high thermal stability of the film (glass transition temperature (T-g) > 110 & DEG;C, 5 wt% loss temperature >367 & DEG;C, and the coefficient of the thermal expansion < 87.88 ppm & DEG;C-1) was majorly contributed by calix[4]arene, while the excellent dielectric properties (the lowest dielectric constant D-k = 2.23 and the average dielectric loss D-f < 1.5 x 10(-3)) were synergistically affected by both calix[4]arene and BCB units. The static water contact angle was mostly higher than 100 & DEG; and high hydrophobicity was confirmed, which can meet the additional requirements in practical application. The low dielectric constant synergized by calix[4]arene and the BCB unit is hoped to aid in developing a novel strategy for low-k materials.
引用
收藏
页码:10509 / 10519
页数:11
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